Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 209 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 148 A I DM
Puld Drain Current 840P D @T C = 25°C Power Dissipation 470W Linear Derating Factor 3.1W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pul Avalanche Energy 1970
mJ I AR Avalanche Current
hapeSee Fig.12a, 12b, 15, 16
A E AR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 conds 300 (1.6mm from ca )°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
IRFP2907
HEXFET ® Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET ® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. The benefits combine to make this design an extremely efficient and reliable device for u in Automotive applications and a wide variety of other applications.性格决定命运英文
Absolute Maximum Ratingsword up
yoohooParameter
Typ.
男胖人适合的发型Max.
Units
R θJC Junction-to-Ca
–––0.32R θCS Ca-to-Sink, Flat, Gread Surface 0.24–––°C/W
R θJA
faq是什么意思
Junction-to-Ambient
–––
40
26个英文字母手写体Thermal Resistance
Description
9/7/00
1
TO-247AC
caraq Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating
q 175°C Operating Temperature q Fast Switching
q
Repetitive Avalanche Allowed up to Tjmax
Benefits
客人英文
Typical Applications
q Integrated Starter Alternator
q
42 Volts Automotive Electrical Systems AUTOMOTIVE MOSFET
PD -93906A
IRFP2907
IRFP2907
IRFP2907
IRFP2907
IRFP2907
woollen
