Semiconductor memory device capable of electricall

更新时间:2023-05-21 07:12:48 阅读: 评论:0

专利名称:Semiconductor memory device capable of electrically erasing and writing information
and a manufacturing method of the same 发明人:Masahiro Shimizu,Masayoshi蜜合
Shirahata,Takashi Kuroi,Takehisa Yamaguchi 申请号:US08/480701
教育学考研科目
申请日:19950607
lovepeace伴鱼少儿英语公开号:US05683923A
strain公开日:头像英文
19971104
专利内容由知识产权出版社提供
brita摘要:A miconductor memory device and a manufacturing method of the same can effectively prevent deterioration of endurance characteristic which may occur in a data erasing operation, and a drain disturb phenomenon which may occur in a data writing operation. In the miconductor memory device, an N-type impurity layer 3 is formed on a main surface of a P- type silicon substrate 1 located in a channel region. Thereby, a high electric field is not applied to a boundary region between the N-type impurity layer 3 and an N-type source diffusion region 10 during erasing of data, so that generation of interband tunneling in this region is effectively prevented. Also in this miconductor memory device, the drain diffusion region 9 has an offt structure in which no portion thereof overlaps the floating gate electrode 5. Therefore, an electric field, which is generated across the floating gate electrode 5 and the drain diffusion region 9 in an unlected cell during writing of data, is weakened, as compared with the prior art, and the drain disturb phenomenon due to F-N tunneling is effectively prevented.12月 英文
妇女节英语德语圣诞歌申请人:MITSUBISHI DENKI KABUSHIKI KAISHA
代理机构:Lowe, Price, LeBlanc & Becker 更多信息请下载全文后查看

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