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专利名称：Guard ring integrated LDMOS
发明人：Vishnu K. Khemka,Stephen J. Contino,Tahir
A. Khan,Adolfo C. Reyes,Ronghua Zhu
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申请号：US12842660
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申请日：20100723
公开号：US08278710B2
公开日：
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breathless20121002
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专利附图：
bent摘要：An LDMOSFET transistor () is provided which includes a substrate (), an epitaxial drift region () in which a drain region () is formed, a first well region () in which a source region () is formed, a gate electrode () formed adjacent to the source region () to define a
first channel region (), and a grounded substrate injection suppression guard structure that includes a patterned buried layer () in ohmic contact with an isolation well region () formed in a predetermined upper region of the substrate so as to be spaced apart from the first well region () and from the drain region (), where the buried layer () is dispod below the first well region () but not below the drain region ().biology是什么意思
申请人：Vishnu K. Khemka,Stephen J. Contino,Tahir A. Khan,Adolfo C. Reyes,Ronghua Zhu
地址：Phoenix AZ US,Gilbert AZ US,Tempe AZ US,Tempe AZ US,Chandler AZ US
deviation国籍：US,US,US,US,US
河北宣布开学时间代理机构：Hamilton & Terrile, LLP
代理人：Michael Rocco Cannatti
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