METHOD FOR CUTTING OF SEMICONDUCTOR WAFER

更新时间:2023-05-20 12:57:52 阅读: 评论:0

专利名称:METHOD FOR CUTTING OF
SEMICONDUCTOR WAFER
发明人:WADA MASARU,ITOU KUNIO,SUGINO TAKASHIiggy
女士们先生们的英文申请号:JP13490380
申请日:19800927bind
江户英语公开号:JPS5759334A
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发盘公开日:
光棍节英文19820409
无产阶级是什么意思
专利内容由知识产权出版社提供
摘要:PURPOSE:To increa the reliability of a miconductor element by a method wherein supersonic waves are applied to the blade which comes in contact with the miconductor single crystal wafer and the cleavage of the wafer, having small crystal distortion, is formed at a plurality of spots simultaneously. CONSTITUTION:The blade 2 of a knife is brought into contact with the circumferential ction of a (100) GaAs single crystal wafer 1 and, at the same time, the supersonic waves generated by the supersonic waves generator 3 are applied to the above. A cleavage is easily formed without having a distortion on the crystal. Accordingly, the cleavages having no distortion on the crystal can be formed at two spots or more simultaneously.
申请人:MATSUSHITA DENKI SANGYO KKsympathetic
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