专利名称:Near-Unity Photoluminescence Quantum
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Yield in MoS2g force
发明人:Matin Amani,Der-Hsien Lien,Daisuke
Kiriya,James Bullock,Ali Javey
价值观 英语
申请号:US15294707
申请日:20161015
公开号:US20170110338A1
公开日:
法语学习网站20170420
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摘要:Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-
merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoSis reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-bad chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoSmonolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest obrved lifetime of 10.8±0.6 nanoconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lars, and solar cells bad on 2D materials.威廉王子的婚礼>mi manchi翻译中文
申请人:Matin Amani,Der-Hsien Lien,Daisuke Kiriya,James Bullock,Ali Javey
地址:Berkeley CA US,Berkeley CA US,Berkeley CA US,Tarcutta AU,Lafayette US 国籍:US,US,US,AU,US灰姑娘的动画片
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