专利名称：RELACS process to double the frequency or品质因数
pitch of small feature formation
发明人：Ramkumar Subramanian,Bhanwar
Singh,Marina V. Plat,Christopher F.throw
节日快乐英文Lyons,Scott A. Bell
fast and furious 6申请号：US09794632candy意思
qvoid申请日：20010228
公开号：US06383952B1
取个英文名
公开日：
20020507
溃退
专利内容由知识产权出版社提供
gayandguy专利附图：
bigboobs摘要：A method of doubling the frequency of small pattern formation. The method
includes forming a photoresist layer, and then patterning it. A RELACS polymer is spread over the patterned photoresist layer. Portions of the RELACS polymer on top portions of each patterned photoresist region are removed, by either etching or by polishing them off. Portions between each patterned photoresist region are also removed in this step. The patterned photoresist regions are removed, preferably by a flood exposure and then application of a developer to the expod photoresist regions. The remaining RELACS polymer regions, which were dispod against respective sidewalls of the patterned photoresist regions, prior to their removal, are then ud for forming small pattern regions to be ud in a miconductor device to be formed on the substrate. The small pattern regions can be ud to form parate poly-gates.
申请人：ADVANCED MICRO DEVICES, INC.
代理机构：Foley & Lardner
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