红旗飘飘引我成长专利名称：Production manner null of
发明人：ダブリュ ティ コクラン,アグスティン エム ガーシャ,グラハム ダブリュ ヒルス,ジェン エル
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イェー
申请号：JP特願平1-85896
申请日：19890406严格英文
公开号：JP特公平7-79106B2
公开日：
19950823
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英语字典
景点英语摘要：PURPOSE: To obtain a metal coat including a lf aligning contact easily, by patterning specified sites of trenches furthermore while preventing the undesired etching of a dielectric layer using a cond etching stop layer, and forming lf-aligned windows in a first dielectric layer. CONSTITUTION: A photoresist for rever metal patterning is removed, a new photoresist layer 35 is deposited, and patterning by a pattern for windows is performed. A pattern for windows is formed by standard lithography. Windows formed in the photoresist are larger than specified dimensions required. Accordingly, an etching stop layer 29 performs lf aligning at the etching time of the next window. Namely, the layer 29 prevents the etching of a dielectric material below it, and a lf-aligned window is formed by doing that way. A dielectric layer 23 is etched, and specific sites of a board below it are expod. Only the sites expod during rever metal etching are etched, and electric contacts are formed.
申请人：アメリカン テレフォン アンド テレグラフ カムパニーindex
地址：アメリカ合衆国,10022 ニューヨーク,ニューヨーク,マディソン アヴェニュー 550
maverick
国籍：US
profound代理人：三俣 弘文
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