武汉英语翻译专利名称：Selective patterning of metallization on a dielectric substrate
发明人：Charles W. C. Lin,Randy L. German
申请号：US07/985663
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enternet申请日：19921204摘要英文翻译
公开号：US05830533A养家活口
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公开日：
19981103
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n>韦氏英语摘要：A method of lectively fabricating metallization on a dielectric substrate is disclod. A ed layer is sputtered on a polymer dielectric, a patterned photoresist mask is dispod over the ed layer, expod portions of the ed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched ed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.
申请人：MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION
舞者英文代理机构：Skjerven, Morrill, MacPherson, Franklin & Friel LLP
代理人：David M. Sigmond
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