Method of forming fine island patterns of micond

更新时间:2023-05-20 03:09:00 阅读: 评论:0

专利名称:Method of forming fine island patterns ofunesco是什么意思
miconductor devices
凹怎么读发明人:Chiang-Lin Shih,Shing-Yih Shih
challenging
四级考试2020报名官网申请号:US15694848
申请日:20170903
公开号:US10204783B1
reasons公开日:
rewarding
20190212
专利内容由知识产权出版社提供
专利附图:
摘要:A method of forming fine island patterns of miconductor devices includes:forming first mask pillars on a hard mask layer on a substrate; forming an upper buffer mask layer on the hard mask layer to cover the first mask pillars; forming first linear
patterns each extending along a first direction, cond linear patterns each extending along a cond direction, and third linear patterns each extending along a third direction in the hard mask layer by at least one patterning process; etching the upper buffer mask layer to form cond mask pillars on the hard mask layer; etching an expod portion of the hard mask layer expod by the first mask pillars and the cond mask pillars until portions of the substrate are etched; and removing the first mask pillars, the cond mask pillars, and remaining portions of the hard mask layer.
申请人:NANYA TECHNOLOGY CORPORATION
武汉英国留学中介地址:New Taipei TW
搭档英语怎么说
国籍:TW
代理机构:CKC & Partners Co., Ltd.
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