专利名称：Exposure method, exposure apparatus, and
mask
dreamgirls发明人：Makoto Tsuchiya,Kei Nara,Nobutaka
Fujimori,Manabu Toguchi,Masami Seki
belcher申请号：US08848394
申请日：19970508
公开号：US06204912B1
凯旋门英文公开日：
计算机英语教程
topview
20010320
专利内容由知识产权出版社提供
fabricated专利附图：
摘要：An exposure method, exposure apparatus and mask are suitable for
manufacturing an active matrix liquid crystal display including, for example, a gate嫡亲
amadori
electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a cond layer is offt from the stitching portion in a first layer by a predetermined distance. The stitching portions of the cond layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the cond layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Becau the contrast gap caud by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced.
申请人：NIKON CORPORATION
代理机构：Nixon & Vanderhye P.C.
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