Flash memory

更新时间:2023-05-17 16:08:44 阅读: 评论:0

专利名称:Flash memory
发明人:Toshihiro Abe,Yoshio Kasai,Naoki
2008年奥运会主题曲Ootani,Mitsuru Sugita
申请号:US10193252
惟妙惟肖造句申请日:20020712
letitbe
公开号:US20030043626A1
2020考研时间具体时间公开日:
goldman
just for a moment20030306
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礼貌原则专利附图:
英文游戏摘要:Redundant circuits to are provided in correspondence to memory blocks to ,respectively. Bit lines BLto BLare located across the memory blocks. Spare bit lines SBLand SBLm are located across the redundant circuits to . When a memory cell failure
occurs in the memory block except a predetermined memory block (for example, a boot block) and when the bit line BLcorresponding to the memory cell failure is replaced with the spare bit line SBL, each of switches and is put into an on state in correspondence to the spare bit line SBL. Furthermore, each of switches and is put into the on state in correspondence to the bit line BL. As a result, the spare bit line SBLturns the redundant circuit corresponding to the memory block , to be connected to the memory block 申请人:ABE TOSHIHIRO,KASAI YOSHIO,OOTANI NAOKI,SUGITA MITSURU
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