专利名称：CHEMICAL-MECHANICAL POLISHING
LIQUID, AND SEMICONDUCTOR SUBSTRATE
MANUFACTURING METHOD AND
POLISHING METHOD USING SAID
POLISHING LIQUID
swl发明人：Shigeru Yoshikawa,Toshiaki Akutsu,Masato Fukusawa人教版四年级上册语文教学计划
申请号：US13504738
申请日：20100914英文网名男生
公开号：US20120214307A1
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delicacy公开日：钝化
hanoi20120823
专利内容由知识产权出版社提供专利附图：
广州美发店摘要：The first embodiment of the CMP polishing liquid of the invention compris cerium oxide particles, an organic compound with an acetylene bond, and water, the content of the organic compound with an acetylene bond being at least 0.00001 mass % and not greater than 0.01 mass % bad on the total mass of the CMP polishing liquid. The cond embodiment of the CMP polishing liquid of the invention compris cerium oxide particles, an organic compound with an acetylene bond, an anionic polymer compound or salt thereof, and water, the anionic polymer compound being obtained by polymerizing a composition comprising a vinyl compound with an anionic substituent as a monomer component, the content of the organic compound with an acetylene bond being at least 0.000001 mass % and less than 0.05 mass % bad on the total mass of the CMP polishing liquid.modernize
申请人：Shigeru Yoshikawa,Toshiaki Akutsu,Masato Fukusawa
地址：Ibaraki JP,Ibaraki JP,Ibaraki JP
不到长城非好汉的意思国籍：JP,JP,JP
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