christmas dayOSF: Oxygen induced stacking fault (OSF). 氧诱导堆积缺陷
μ-PCD: Microwave photoconductive decay. 微波光电导衰减
LBIC: light beam induced current. 光诱导电流
SPV: Surface photovoltage. 表面光伏
SHR: Sheet resistance. 薄膜电阻，薄层电阻，表面电阻，方块电阻IOE: Internal quantum efficiency. 内部量子效率
EQE: external quantum efficiency 外部量子效率
V-Q: Voltage-Charge 电压-电荷
C-PCD: Charge-PCD.
Eddy current: 涡流，涡电流
Diffusion length: 扩散长度
Minority carrier lifetime: 少数载流子寿命
As-cut wafer: ??
Conversion efficiency: 转换效率
FF: Fill factor: 填充系数
Effective lifetime : 有效寿命
Surface recombination velocity: 表面复合速率
Short circuit current: 短路电流
Open circuit voltage: 开路电压
Multi-crystalline: 多晶硅
Bias light: 偏置光
Depletion region: 耗尽区
Drift motion: 漂移运动
Majority carriers: 多数载流子
Minority carriers: 少数载流子
Vacuum chuck: 真空夹盘，吸盘
Implied open-circuit voltage: ？开路电压
Bulk lifetime: 体寿命fiscal cliff
QSS Quasi-steady-state: 准稳态
Sheet Resistance: film resistor measurement in [ohm/sq] 方块电阻Resistivity: resistivity measurement in [ohm*cm] 电阻率
sheet resistance: sheet resistor measurement in [ohm/cm] 片电阻Resistance: pure resistor measurement in [ohm] 电阻
Contact Resistivity: contact resistor measurement in [m+ohm+cm] 接触电阻transfer-length-method：移动长度的方法？
4-point-probes：4探针
Four-point meter: 四探针测试仪
Micron：微米
Millimeter：毫米
nanometer (nm) n ：纳米
microscope：显微镜
tweezers：镊子
polite怎么读>shrinksSRV: surface recombination velocity: 表面复合速率
SOP: Standard Operating Procedure：标准操作程序
LT: lifetime: 寿命
Dox: the oxide thickness 氧化层厚度
Penetration depth: 贯穿深度，穿透深度
Scattered reflectance: 漫反射
Direct reflectance: 直接反射
Stand by: 待命
LT: Transfer length 传输长度，传输线的衰减长度The transfer length L T is an admeasurement for the homogeneity of the voltage that flows through the contact profile. RhoC[mhom cm2]=ρC[ohm cm2] = resistivity: 电阻率
TLM：Transfer Length Method：传输线模型
TLM: Transmission line mode: ?
SCR: Specific contact resistance: 比接触电阻率
Ohmic contact: 欧姆接触
c-Si: crystal silicon晶体硅
Ws: watt-conds
MCD: minority carrier density: 少数载流子密度
QSSPC: Quasi Steady State Photoconductance
BSFs: back surface fields: 背场
SRH: Shockley-Read-Hall，?
Saturation current density；J0.
Auger recombination：俄歇复合
Radiative recombination：辐射复合
I mpurities and defects: 杂质与缺陷
Effective lifetime: 有效寿命
Inver lifetime：反转寿命：(寿命的倒数)
nature是什么意思
Apparent lifetime: 表观寿命？
DRM ：depletion-region modulation ：耗尽区调制？
Conductance：电导率
DC: direct current: 直流电
Bulk lifetime: 体寿命cock什么意思
high-low junctions：高低结
substrate：基体
implied open circuit voltage：？开路电压（内在的？）
Sensor Coil : 传感线圈
PFF: pudo FF: 假的填充因子？
RF nsor: Radio Freqency nsor 射频传感器
Impurity distribution: 杂质分布
Trapping effect: ? (WCT120) ：捕获效应？
Trap-induced photoconductance: 捕获诱导光电导
Minority carrier traps: ?
Dislocation: 位错
Grain boundary: 晶界
Metallic impurity: 金属杂质
DRM: depletion-region modulation: ?
R：roughness profile: 粗糙度曲线
Ra: 算术平均值/中心线平均值Arithmetic average (Ra)
Rz: 十点平均值：ten point height of irregularities.
TIMS: Tokyo Seimitsu Integrated Measuring System
SEM: Scanning Electron Microscope （扫描电子显微镜）
ECV：Electrical chemical CV（电化学CV 分布仪）
Rc: Contact resistance （接触电阻）
Rsh: Shunt resistance （反向电阻）？
EBIC: Electron Beam Induced Current （电子束引发电流）
LBIC: Light Beam Induced Current （光生电流）
Suns-Voc: 光生开路电压
mc-Si：Multicrystalline silicon
MPPT: maximu power point tracking: 最大功率跟踪
PS: Porous silicon: 多孔硅
AF: Anisotropic Factor: 各向异性因子
RACK：设备架
Lock-in amplifiers: 锁相放大器
EMF: electromagnetic fields 电磁场，电磁地带
ENBW: equivalent noi bandwidth
MAD: mean average deviation
RMS: root mean square
BCSC: 埋槽电极太阳电池
Pyramid: 金字塔
PERL: Passivated Emitter, Rear locally-diffud: 钝化发射极、背面定域扩散I SC: short-circuit current: 短路电流
V OC: open-circuit voltage: 开路电压
FF：filling factor: 填充因子
η：conversion efficiency: 转换效率
xhilaration
TCAD: technology computer adied design
PV: photovoltaic
Metallurgical-grade silicon: 冶金级硅
solar-grade silicon：太阳能级硅
德文翻译c-Si SC：crystalline silicon solar cells：晶体硅太阳电池
EL：electroluminescence：电致发光
PL：photoluminescence：光致发光
SEM：scanning electron microscope：扫描电镜
PE ：plasma etching：等离子体刻蚀
PECVD：Plasma enhanced chemical vapor deposition
Ag-paste：银浆
EDS：Energy dispersive X-ray spectroscopy
fabrication process：制造工艺
STC: standard test conditions (illumination AM 1.5G, 1000W/m2 and temperature 25 。C) IDCAM: irradiance decay cell analysis method
Shunt resistance: 并联电阻
Series resistance: 串联电阻
RTA: rapid thermal annealing : 快速热退火
ODBC: Open Databa Connectivity 开放式数据库互接
Thermal donors: 热施主
Thermal acceptors: 热受主
EM：Electromigration：电迁移
Teflon：特氟纶，聚四氟乙烯
stainless steel：不锈钢
ECV Profiling, CV Profiling: Electrochemical Capacitance Voltage Profiling PEC Etching: Photo-Electrochemical Wet Etching
PVC：聚氟乙烯
PL-S: photoluminescence spectrometer: 光致发电分光计bread可数吗
PL-S: photoluminescence spectroscopy: 光致发电光谱分析法
PL：photoluminescence：光致发光
MSA: Measurement System Analysis
SCE: Saturated Calomel Electrode: 饱和甘汞电极
Tungsten lamp ：钨灯
Halogen lamp ：卤灯
mercury lamp ：汞灯
STC: Standard testing conditions：標準測試條
ECT ：equivalent cell temperature
EEPROM: electrically erasable programmable read-only memory: 电可擦除只读存储器
package是什么意思PSLoad: Puld Solar Load
PSL –SCD : Puld Solar Load – Solar Capture Device: 太阳捕获装置
PSS：Puld Solar Simulator
WD: working distance
QE：Quantum Efficiency
IPCE ：Monochromatic Incident Photon-to-Electron Conversion Efficiency：光电转化效率：是指太
阳能电池（光电材料）产生的电子-空穴对数目与入射到太阳能电池（光电材料）表面的光子数目之比。
The thickness of atmosphere light must penetrate is called the Air Mass (AM) The line resistance indicates the quality of the electrical conductance along the fingers or busbars whereas the contact resistance shows whether the contact
to the silicon has been formed correctly during firing.
