UV-blocking layer for reducing UV-induced charging

更新时间:2023-08-11 05:54:17 阅读: 评论:0

专利名称:UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory
devices in BEOL processing
zaixian>sunshine cleaning发明人:Minh V. Ngo,Tazrien Kamal,Mark T.
Ramsbey,Arvind Halliyal,Jaeyong Park,Ning
Cheng,Jeff P. Erhardt,Clarence B.
Ferguson,Jeffrey A. Shields,Angela T.
三年级英语上册Hui,Robert A. Huertas,Tyagamohan Gottipati 申请号:US10818112emission
申请日:20040405
公开号:US20040191989A1
公开日:
dismissal20040930
专利内容由知识产权出版社提供专利附图:
摘要:A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a miconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. In one embodiment, the device includes a substantially UV-opaque sub-layer of a contact cap layer or a substantially UV-opaque contact cap layer.
申请人:NGO MINH V.,KAMAL TAZRIEN,RAMSBEY MARK T.,HALLIYAL ARVIND,PARK JAEYONG,CHENG NING,ERHARDT JEFF P.,FERGUSON CLARENCE B.,SHIELDS JEFFREY A.,HUI ANGELA T.,HUERTAS ROBERT A.,GOTTIPATI TYAGAMOHANtake me to your heart歌词
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