Insulated-gate bipolar transistor
Electronic symbol for IGBT Cross ction of a typical IGBT cell. The
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illustration is not to scale.
Equivalent circuit for IGBT
The insulated gate bipolar transistor or IGBT is a three-terminal
power miconductor device, noted for high efficiency and fast
switching. It switches electric power in many modern appliances:
electric cars, trains, variable speed refrigerators, air-conditioners and
even stereo systems with switching amplifiers. Since it is designed to
turn on and off rapidly, amplifiers that u it often synthesize complex
waveforms with pul width modulation and low-pass filters. Pul
repetition frequency is well into the ultrasonic range, such as at least,
say, ten times the highest audio frequency handled by the amplifier.
The IGBT combines the simple gate-drive characteristics of the
MOSFETs with the high-current and low –saturation-voltage capability
of bipolar transistors by combining an isolated gate FET for the control
input, and a bipolar power transistor as a switch, in a single device.
The IGBT is ud in medium- to high-power applications such as
switched-mode power supplies, traction motor control and induction
heating. Large IGBT modules typically consist of many devices in
parallel and can have very high current handling capabilities in the
order of hundreds of amperes with blocking voltages of 6000 V,
equating to hundreds of kilowatts.
The IGBT is a fairly recent invention. The first-generation devices of
the 1980s and early 1990s were relatively slow in switching, and prone
to failure through such modes as latchup (in which the device won't
turn off as long as current is flowing) and condary breakdown (in
which a localized hotspot in the device goes into thermal runaway and
burns the device out at high currents). Second-generation devices were
much improved, and the current third-generation ones are even better,
with speed rivaling MOSFETs, and excellent ruggedness and tolerance
workon
of overloads.[1]
The extremely high pul ratings of cond- and third-generation
devices also make them uful for generating large power puls in
areas like particle and plasma physics, where they are starting to
superde older devices like thyratrons and triggered spark gaps.
Their high pul ratings, and low prices on the surplus market, also
make them attractive to the high-voltage hobbyist for controlling large
amounts of power to drive devices such as solid-state Tesla coils and
coilguns.Availability of affordable, reliable IGBTs is an important enabler for electric vehicles and hybrid cars.
Static characteristic of an IGBT.History
The IGBT is a miconductor device with four alternating layers
(P-N-P-N) that are controlled by a metal-oxide-miconductor (MOS)
gate structure without regenerative action. This mode of operation was
first propod by Yamagami in his Japane patent S47-21739, which
was filed in 1968.[2] This mode of operation was first experimentally
discovered by B. Jayant Baliga in vertical device structures with a
V-groove gate region and reported in the literature in 1979.[3] The device structure was referred to as a ‘V-groove MOSFET device with
the drain region replaced by a p-type Anode Region ’ in this paper and
subquently as the insulated gate rectifier (IGR),[4] the insulated-gate transistor (IGT),[5] the conductivity-modulated field-effect transistor (COMFET)[6] and "bipolar-mode MOSFET".[7]
Plummer found the same IGBT mode of operation in the four layer device (SCR) and he first filed a patent application for the device structure in 1978. USP No.4199774 was issued in 1980 and B1 Re33209[8] was reissued in 1995 for the IGBT mode operation in the four layer device (SCR).
killers
Hans W. Becke and Carl F. Wheatley invented a similar device for which they filed a patent application in 1980, and which they referred to as "power MOSFET with an anode region".[9] This patent has been called "the minal patent of the Insulated Gate Bipolar Transistor."[10] The patent claimed "no thyristor action occurs under any device operating conditions." This substantially means that the device exhibits non-latch-up IGBT operation over the entire device operation range.
Practical devices capable of operating over an extended current range were first reported by Baliga et al. in 1982.[4]
A similar paper was also submitted by J.P. Rusl et al. to IEEE Electron Device Letter in 1982.[11] The applications for the device were initially regarded by the power electronics community to be verely restricted by its slow switching speed and latch-up of the parasitic thyristor structure inherent within the device. However, it was demonstrated by Baliga and also by A.M. Goodman et al. in 1983 that the switching speed could be adjusted over a broad range by using electron irradiation.[5] [12] This was followed by demonstration of operation of the device at elevated temperatures by Baliga in 1985.[13] Successful efforts to suppress the latch-up of the parasitic thyristor and the scaling of the voltage rating of the devices at GE allowed the introduction of commercial devices in 1983,[14]which could be utilized for a wide variety of applications.
Complete suppression of the parasitic thyristor action and the resultant non-latch-up IGBT operation for the entire device operation range was achieved by A. Nakagawa et al. in 1984.[15] The non-latch-up design concept was filed for US patents.[16] To test the lack of latchup, the prototype 1200V IGBTs were directly connected without any loads across a 600V constant voltage source and were switched on for 25 microconds. The entire 600V was dropped across the device and a large short circuit current flowed. The devices successfully withstood this vere condition.This was the first demonstration of so-called "short-circuit-withstanding-capability" in IGBTs. Non-latch-up IGBT operation was ensured, for the first time, for the entire device operation range.[17] In this n, the non-latch-up IGBT propod by Hans W. Becke and Carl F. Wheatley was realized by A. Nakagawa et al. in 1984. Products of non-latch-up IGBTs were first commercialized by Toshiba in 1985.
Once the non-latch-up capability was achieved in IGBTs, it was found that IGBTs exhibited very rugged and a very large safe operating area. It was demonstrated that the product of the operating current density and the collector voltage exceeded the theoretical limit of bipolar transistors, 2x105W/cm 2, and reached 5x105W/cm 2.[1] [17]
The insulating material is typically made of solid polymers which have issues with degradation. There are developments that u an ion gel to improve manufacturing and reduce the voltage requir
ed.[18]
Device structure
An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
Cross ction of a typical IGBT showing internal
connection of MOSFET and Bipolar Device This additional p+ region creates a cascade connection of a PNP
bipolar junction transistor with the surface n-channel MOSFET.
Comparison With Power MOSFETS
An IGBT has a significantly lower forward voltage drop compared to a
conventional MOSFET in higher blocking voltage rated devices. As
the blocking voltage rating of both MOSFET and IGBT devices
increas, the depth of the n- drift region must increa and the doping
must decrea, resulting in roughly square relationship increa in
forward conduction loss compared to blocking voltage capability of the
device. By injecting minority carriers (holes) from the collector p+
region into the n- drift region during forward conduction, the resistance of the n- drift region is considerably reduced.However, this resultant reduction in on-state forward voltage comes with veral penalties:
•The additional PN junction blocks rever current flow. This means that unlike a MOSFET, IGBTs cannot conduct in the rever direction. In bridge circuits where rever current flow is needed an additional diode
(called a freewheeling diode) is placed in parallel with the IGBT to conduct current in the opposite direction. The penalty isn't as vere as first assumed though, becau at the higher voltages where IGBT usage dominates,discrete diodes are of significantly higher performance than the body diode of a MOSFET.
•The rever bias rating of the N- drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a rever voltage to the IGBT, an additional ries diode must be ud.
•The minority carriers injected into the n- drift region take time to enter and exit or recombine at turn on and turn off. This results in longer switching time and hence higher switching loss compared to a
power MOSFET.
•The on-state forward voltage drop in IGBTs behaves very differently to that in power MOSFETS. The MOSFET voltage drop can be modeled as a resistance, with the voltage drop proportional to current. By contrast, IGBT has a diode like voltage drop (typically of the order of 2V) increasing only with the log of the current. Additionally,MOSFET resistance is typically lower for smaller blocking voltages meaning that the choice between IGBTs and power MOSFETS depend on both the blocking voltage and current involved in a particular application, as well as the different switching characteristics mentioned above.
In general high voltage, high current and low switching frequencies favor IGBTs while low voltage, low current and high switching frequencies are the domain of the MOSFET.
IGBT models
Rather than using a device physics-bad model, SPICE simulates IGBTs using Macromodels, a method that combines an enmble of components such as FETs and BJTs in a Darlington configuration. An alternative physics-bad model is the Hefner model, introduced by Allen Hefner of the NIST. It is a fairly complex model that has shown very good results. Hefner's model is described i
n a 1988 paper and was later extended to a thermo-electrical model and a version using SABER.[19]
Usage
IGBT-Module (IGBTs and freewheeling diodes)
with a rated current of 1,200 A and a maximum voltage of 3,300 V Opened IGBT module with four IGBTs (half H-bridge) each rated for 400 A 600 V
Small IGBT module, rated up to 30 A, up to 900V
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References
[1] A.Nakagawa et al., "Safe operating area for 1200-V non-latch-up bipolar-mode MOSFETs", IEEE Trans. on Electron Devices, ED-34,pp.351-355(1987)
ielts是什么[2]Yamagami's patent can be arched by inputting "Kind code" B, "Number" S47-21739 in the data ba (www4.jp/Tokujitu/tjsogodben.ipdl?N0000=115)
[3] B. J. Baliga, “Enhancement and Depletion Mode Vertical Channel MOS Gated Thyristors ”, Electronics Letters, Vol. 15, pp. 645-647,September 27, 1979.
[4] B. J. Baliga, et al., “The Insulated Gate Rectifier ”, IEEE International Electron Devices Meeting, Abstract 10.6, pp. 264-267, 1982.
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[5] B. J. Baliga, “Fast Switching Insulated Gate Transistors ”, IEEE Electron Device Letters, Vol. EDL-4, pp. 452-454, 1983.
[6]J. P. Rusll, et al., “The COMFET: A New High Conductance MOS Gated Device ”, IEEE Electron Device Letters, Vol. EDL-4, pp. 63-65,1983.
碧昂丝演唱会[7] A.Nakagawa et al., High voltage bipolar-mode MOSFETs with high current capability", Ext. Abst. of SSDM, pp.309-312(1984)
[8]B1 Re33209 is attached in the pdf file of Re 33209 (/patents?id=I8EGAAAAEBAJ&dq=Re33209)
[9]U. S. Patent No. 4,364,073 (/patents?id=0ug5AAAAEBAJ&dq=4,364,073,), Power MOSFET with an Anode Region, issued December 14, 1982 to Hans W. Becke and Carl F. Wheatley
[10]"C. Frank Wheatley, Jr., BSEE" (umd.edu/ihof/wheatley.htm). Innovation Hall of Fame at A. James Clark School of Engineering . .
[11]J.P. Rusl et al., "The COMFETs - a new high-conductance MOS-gate device," IEEE Electron Device Lett., vol. EDL-4, pp.63-65, 1983
unenthusiastic
[12] A. M. Goodman et al., "Improved COMFETs with fast switching speed and high current capability," IEEE International Electron Devices Meeting Technical Digest, pp.79-82,1983
[13] B. J. Baliga, “Temperature Behavior of Insulated Gate Transistor Characteristics ”, Solid State E
lectronics, Vol. 28, pp. 289-297, 1985.
[14]Product of the Year Award: “Insulated Gate Transistor ” General Electric Company, Electronics Products, 1983.
[15] A. Nakagawa et al., "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO", IEEE International Electron Devices Meeting Technical Digest, pp.860-861,1984.
[16] A.Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, “CONDUCTIVITY MODULATED MOSFET ” US Patent No.6025622(Feb.15, 2000) (/patents?id=D68DAAAAEBAJ&dq=6025622), No.5086323 (Feb.4, 1992) and No.4672407(Jun.9, 1987) (/patents?vid=USPAT4672407)
[17] A. Nakagawa et al., "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics" IEEE International Electron Devices Meeting Technical Digest, pp.150-153, 1985
[18]"Ion Gel as a Gate Insulator in Field Effect Transistors" (www.licen.umn.edu/Products/
Ion-Gel-as-a-Gate-Insulator-in-Field-Effect-Transistors__Z07062.aspx). .
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[19] A. R. Hefner, Jr., et al., “An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator ”, IEEE Transactions on Power Electronics, Vol 9, No 5, pp. 532-542, 1994.
Literature
•Dr. Ulrich Nicolai, Dr. Tobias Reimann, Prof. Jürgen Petzoldt, Jof Lutz: Application Manual IGBT and MOSFET Power Modules, 1. Edition, ISLE Verlag, 1998, ISBN 3-932633-24-5 PDF-Version (www.
External links
•About the inventors (eng.umd.edu/ihof/inductees/wheatley.html)
•Device physics information (www.elec.gla.ac.uk/groups/dev_mod/papers/igbt/igbt.html) from the University of Glasgow
•Spice model for IGBT (/articles/Igbt.pdf)
•Insulated Gate Bipolar Transistor (IGBT) Basic (/images/technical_support/ Application Notes By Topic/IGBTs/IXYS_IGBT_Basic_I.pdf) Ixys Corporation Application note IXAN0063•Cooling IGBT Modules (/)
•Using IGBT Modules - Powerex (/Library.aspx?s=1^0|2^0|3^0|&k=using igbt)•IGBT and control input circuit for PWM applications (/products/hdd.htm)
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