德语字母尼亚美专利名称：Semiconductor integrated circuit device and
method of manufacturing the same
发明人：Masayuki Suzuki
申请号：US10208780
申请日：20020801
东方丽人公开号：US06734086B2preliminary
doggy bag公开日：
20040511
xpk>kiln
专利内容由知识产权出版社提供
中翻译英
专利附图：
摘要：A WN film rving as an adhesive layer is deposited over the sidewalls and
bottom surface of a hole in a silicon oxide film where an information storage capacitor is to be formed. A Ru film to rve as a lower electrode for the information storageannally
capacitor is formed above the WN film by CVD using Ru(HFAC), HO and Has ingredients, so that a ratio of partial pressure of HO to His controlled to be in the area below a curve (a). When the Ru film is formed by CVD utilizing hydrolysis, the film quality of the Ru film can be enhanced. The ratio of partial pressure of HO to His controlled, whereby oxidation of the Ru film can be suppresd. When it is controlled to be in the area below a curve (b) to form the Ru film, oxidation of the WN film can be suppresd.
申请人：RENESAS TECHNOLOGY CORP.
代理机构：Antonelli, Terry, Stout & Kraus, LLP四库全书是什么
更多信息请下载全文后查看
