专利名称：Non-volatile memory (NVM) retention
improvement utilizing protective electrical
shield
发明人：Yuri Mirgorodski,Peter J. Hopper,Vladislav
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申请号：US11044511
申请日：20050127
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公开号：US07375393B1
公开日：
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英文报价
专利附图：
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摘要：An electrical shield is provided in a non-volatile memory (NVM) cell structure to
protect the cell's floating gate from any influence resulting from charge redistribution in the vicinity of the floating gate during a programming operation. The shield may be created from the cond polysilicon layer or other conductive material covering the floating gate. The shield may be grounded. Alternately, it may be connected to the cell's control gate electrode resulting in better coupling between the floating gate and the control gate. It is not necessary that the shield cover the floating gate completely, the necessary protective effect is achieved if the coupling to the dielectric layers surrounding the floating gate is reduced.
申请人：Yuri Mirgorodski,Peter J. Hopper,Vladislav Vashchenko
地址：Sunnyvale CA US,San Jo CA US,Palo Alto CA US
whatsapp是什么国籍：US,US,US
代理机构：Stallman & Pollock LLP
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