专利名称：Interlayer method utilizing CAD for process-induced proximity effect correction
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发明人：San-De Tzu,Shih-Chiang Tu,Chia-Hui Lin
申请号：US08/971541
法律硕士考试
申请日：19971117
公开号：US05994009A英文铃声
公开日：
19991130stx
cena
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摘要：The prent invention disclos a novel method for interlayer corrections for photolithographic patterns that are reproduced on a wafer surface capable of correcting not only the optically-induced proximity effect but also the process-induced proximity effect. In the method, a conventional optical proximity correction is first performed on a photomask, the corrected photomask is then ud to produce a pattern on a wafer surface. The various critical dimensions bias values at a multiplicity of locations are then measured and fed back to the computer aided design data file for the photomask for producing patterns that are corrected for both optically-induced and process-induced proximity effect on a wafer surface.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.pneumonia
权威翻译公司
爱斯基摩人的冰屋代理机构：Tung & Associates
遥控器英文
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