RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
RF power transistors designed for both narrowband and broadband ISM,broadcast and aerospace applications operating at frequencies from 1.8to 2000MHz.The devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for u in applications where high VSWRs are encountered.
Typical Performance:V DD =50Volts
Frequency (MHz)Signal Type P out (W)G ps (dB)ηD (%)IMD (dBc)30--512(1,3)Two--Tone (100kHz spacing)
100PEP 19.030.0--30512(2)CW
10027.270.0—512(2)
英语六级真题下载Pul (200μc,20%
Duty Cycle)
100Peak
26.0
70.0
—
Load Mismatch/Ruggedness
Frequency (MHz)Signal Type VSWR P out (W)Test Voltage Result 512(2)
Pul
(100μc,20%Duty Cycle)
>65:1at all Pha Angles
130(3dB Overdrive)50
No Device Degradation
512(2)
CW
126(3dB Overdrive)
1.Measured in 30--512MHz broadband reference circuit.
2.Measured in 512MHz narrowband test circuit.
3.The values shown are the minimum measured performance numbers across the indicated frequency range.
Features •Wide Operating Frequency Range •Extremely Rugged
•Unmatched,Capable of Very Broadband Operation •Integrated Stability Enhancements •Low Thermal Resistance
•Integrated ESD Protection Circuitry
•
In Tape and Reel.R5Suffix =50Units,56mm Tape Width,13inch Reel.
Table 1.Maximum Ratings
Rating
Symbol Value Unit Drain--Source Voltage V DSS --0.5,+133Vdc Gate--Source Voltage V GS --6.0,+10Vdc Storage Temperature Range T stg --65to +150°C Ca Operating Temperature T C --40to +150°C Operating Junction Temperature (4,5)
T J
--40to +225
°C
4.Continuous u at maximum temperature will affect MTTF.
5.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.
Document Number:MRFE6VP100H
Rev.0,5/2012
Freescale Semiconductor Technical Data
MRFE6VP100HR5MRFE6VP100HSR5Table 2.Thermal Characteristics
Characteristic
Symbol Value (1,2)
Unit Thermal Resistance,Junction to Ca
CW:Ca Temperature 81°C,100W CW,50Vdc,I DQ(A+B)=100mA,512MHz R θJC 0.38°C/W Thermal Impedance,Junction to Ca
Pul:Ca Temperature 73°C,100W Peak,100μc Pul Width,20%Duty Cycle,50Vdc,I DQ(A+B)=100mA,512MHz
Z θJC
moleskine0.12
°C/W
Table 3.ESD Protection Characteristics
Test Methodology
Class Human Body Model (per JESD22--A114)2,pass 2500V Machine Model (per EIA/JESD22--A
115)B,pass 250V Charge Device Model (per JESD22--C101)
IV,pass 2000V
Table 4.Electrical Characteristics (T A =25°C unless otherwi noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (3)
Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS ——400nAdc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mA)
V (BR)DSS 133141—Vdc Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc)
I DSS ——3μAdc Zero Gate Voltage Drain Leakage Current (V DS =100Vdc,V GS =0Vdc)I DSS
—
—
10
μAdc
On Characteristics
Gate Threshold Voltage (3)
(V DS =10Vdc,I D =170μAdc)
V GS(th) 1.6 2.1 2.6Vdc Gate Quiescent Voltage
(V DD =50Vdc,I D =100mAdc,Measured in Functional Test)V GS(Q) 2.1 2.6 3.1Vdc Drain--Source On--Voltage (3)(V GS =10Vdc,I D =1Adc)V DS(on)
—
0.23
—
Vdc
Dynamic Characteristics (3)
Rever Transfer Capacitance
(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss —0.24—pF Output Capacitance
(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C oss —23.9—pF Input Capacitance
(V DS =50Vdc,V GS =0Vdc ±30mV(rms)ac @1MHz)
C iss
—
73.6
—
pF
Functional Tests (In Freescale Test Fixture,50ohm system)V DD =50Vdc,I DQ(A+B)=100mA,P out =100W Peak (20W Avg.),f =512MHz,200μc Pul Width,20%Duty Cycle Power Gain G ps 25.026.027.0dB Drain Efficiency ηD 68.070.0—%Input Return Loss IRL —
--14
--9
dB
Load Mismatch/Ruggedness (In Freescale Test Fixture,50ohm system,I DQ(A+B)=100mA)
Frequency (MHz)
Signal Type
VSWR P out (W)Test Voltage,V DD
Result
512
Pul
lock free
(100μc,20%Duty Cycle)
>65:1
at all Pha Angles
130Peak (3dB Overdrive)50
No Device Degradation
CW
126
(3dB Overdrive)
1.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.
2.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.Select Documentation/Application Notes --AN1955.
3.Each side of device measured parately.
MRFE6VP100HR5MRFE6VP100HSR5
TYPICAL CHARACTERISTICS
50
0.1
1000
10
V DS ,DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2.Capacitance versus Drain--Source Voltage
C ,C A P A C I T A N C E (p F )
20
10
1
Note:Each side of device measured parately.
Figure 3.Normalized V GS versus Quiescent
Current and Ca Temperature
N O R M A L I Z E D V G S (Q )
T C ,CASE TEMPERATURE (°C)
100
--50
--25
25
50
75
250
108
90
T J ,JUNCTION TEMPERATURE (°C)
Figure 4.MTTF versus Junction Temperature --CW
107106
104
110
130
150
170
190
M T T F (H O U R S )
210
tubi
230
105
100
Note:MTTF value reprents the total cumulative operating time under indicated test conditions.
30
40
马伊姆 拜力克100--1.945I DQ (mA)Slope (mV/°C)
200--1.826300--1.700600
--1.648
512MHz NARROWBAND PRODUCTION TEST FIXTURE布局的意思
Figure5.MRFE6VP100HR5(HSR5)Narrowband Test Circuit Component Layout—512MHz
Table5.MRFE6VP100HR5(HSR5)Narrowband Test Circuit Component Designations and Values—512MHz Part Description Part Number Manufacturer B1,B2Small Ferrite Beads,Surface Mount2743019447Fair-Rite
C1,C822μF,35V Tantalum Capacitors T491X226K035AT Kemet
C2,C9120pF Chip Capacitors ATC100B121JT500XT ATC
C3 4.3pF Chip Capacitor ATC100B4R3CT500XT ATC
C4,C556pF Chip Capacitors ATC100B560CT500XT ATC
C6,C7,C15,C16,C17,C1827pF Chip Capacitors ATC100B270JT500XT ATC
C10,C210.1μF Chip Capacitors C1812F104K1RACTU Kemet
C11,C220.01μF Chip Capacitors C1825C103K1GACTU Kemet
C12,C23470μF,63V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C13,C19240pF Chip Capacitors ATC100B241JT200XT ATC
C14,C20 2.2μF Chip Capacitors G2225X7R225KT3AB ATC
C247.5pF Chip Capacitor ATC100B7R5CT500XT ATC
Coax1,225ΩSemi Rigid Coax,2.2″Shield Length UT-141C-25Micro-Coax Coax3,425ΩSemi Rigid Coax,2.0″Shield Length UT-141C-25Micro-Coax
L1,L25Turns,18.5nH Inductors,Wire Wound A05TKLC Coilcraft2016考研政治答案
L3,L47Turns,22nH Inductors,Wire Wound B07TJLC Coilcraft
PCB0.030″,εr=2.55AD255D Arlon
MRFE6VP100HR5MRFE6VP100HSR5
MRFE6VP100HR5MRFE6VP100HSR5
sweep是什么意思Z 1
0.366″×0.082″M i c r o s t r i p
Z 2,Z 15
0.070″×0.102″M i c r o s t r i p
Z 3,Z 16
0.094″×0.102″M i c r o s t r i p
Z 4,Z 17
0.103″×0.102″M i c r o s t r i p
Z 5,Z 18
0.125″×0.102″M i c r o s t r i p
Z 6,Z 19
0.168″×0.102″M i c r o s t r i p
Z 7*,Z 20*
安装预算员培训
0.912″×0.058″M i c r o s t r i p
Z 8,Z 21
0.420″×0.726″M i c r o s t r i p
Z 9,Z 22
0.271″×0.507″M i c r o s t r i p
Z 10*,Z 23*
0.822″×0.150″M i c r o s t r i p
Z 11,Z 24
0.590″×0.216″M i c r o s t r i pcabazon
Z 12,Z 25
0.257″×0.216″M i c r o s t r i p
Z 13
0.192″×0.082″M i c r o s t r i p
Z 14
0.173″×0.082″M i c r o s t r i p
*L i n e l e n g t h i n c l u d e s m i c r o s t r i p b e n d s
F i g u r e 6.M R F E 6V P 100H R 5(H S R 5)N a r r o w b a n d T e s t C i r c u i t S c h e m a t i c —512M H z
T a b l e 6.M R F E 6V P 100H R 5(H S R 5)N a r r o w b a n d T e s t C i r c u i t M i c r o s t r i p s —512M H z
D e s c r i p t i o n
M i c r o s t r i p
D e s c r i p t i o n
M i c r o s t r i p
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