The AP5N04MI us advanced trench technology
to provide excellent R DS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This六级成绩查询无准考证
device is suitable for u as a
Battery protection or in other Switching application.
General Features
V DS = 40V I D =5.0A
fungusR DS(ON) < 37mΩ @ V GS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS)
AP5N04MI SOT23-3MD4-5A3000
Absolute Maximum Ratings (TA=25℃ unless otherwi noted)韩国的新年
Symbol Parameter Rating Units
V DS Drain-Source Voltage40 V
V GS Gate-Sou r ce Voltage ±20V
I D@T A=25℃Continuous Drain Current, V GS @ 10V1 5.0 A
I D@T A=70℃Continuous Drain Current, V GS @ 10V1 3.5 A
I DM Puld Drain Current214 A
P D@T A=25℃Total Power Dissipation3 1 W T STG Storage Temperature Range -55 to 150 ℃
T J Operating Junction Temperature Range -55 to 150 ℃
RθJA Thermal Resistance Junction-ambient 1125 ℃/W
RθJC Thermal Resistance Junction-Ca180 ℃/W
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Electrical Characteristics (TA=25℃ unless otherwi noted)
Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS=0V , I D=250uA 40 --- --- V △BV DSS/△T J BVDSS Temperature Coefficient Reference to 25℃, I D=1mA --- 0.032 --- V/℃
R DS(ON)Static Drain-Source On-Resistance2V GS=10V , I D=4A --- 30 37
mΩV GS=4.5V , I D=3A --- 40 50
V GS(th)Gate Threshold Voltage
V GS=V DS , I D =250uA 1.0 1.5 2.5 V
△V GS(th)V GS(th) Temperature Coefficient --- -4.5 --- mV/℃
I DSS Drain-Source Leakage Current V DS=32V , V GS=0V , T J=25℃--- --- 1
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uA V DS=32V , V GS=0V , T J=55℃--- --- 5
I GSS Gate-Source Leakage Current V GS=±20V , V DS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , I D=4A --- 8 --- S R g Gate Resistance V DS=0V , V GS=0V , f=1MHz --- 2.4 4.8 Ω
Q g Total Gate Charge (4.5V)
V DS=15V , V GS=4.5V , I D=3A --- 5 ---
nC
Q gs Gate-Source Charge --- 1.54 --- Q gd Gate-Drain Charge --- 1.84 ---
T d(on)Turn-On Delay Timeav是什么意思
V DD=15V , V GS=10V ,
R G=3.3
I D=1A --- 7.8 ---
ns
T r Ri Time --- 2.1 --- T d(off)Turn-Off Delay Time --- 29 --- T f Fall Time --- 2.1 ---
C iss Input Capacitance
V DS=15V , V GS=0V , f=1MHz --- 452 ---
pF
C oss Output Capacitance --- 51 ---
C rss Rever Transfer Capacitance --- 38 ---sisi
I S Continuous Source Current1,4V
G=V D=0V , Force Current
--- --- 4.5 A
I SM Puld Source Current2,4--- --- 14 A
V SD Diode Forward Voltage2V GS=0V , I S=1A , T J=25℃--- --- 1.2 V
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.apue
2.The data tested by puld , pul width ≦ 300us , duty cycle ≦ 2%
40693.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
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3
Typical Characteristics Fig.1 Typical Output Characteristics Fig.3 Forward Characteristics Of Rever Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V vs. T
2014高考成绩查询
V
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.7 Capacitance
Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform
the road not taken
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5Package Mechanical Data:SOT23-3L
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E
1 1.500 1.700 0.059 0.067 E 2.650 2.950
0.104 0.116
e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ
0° 8° 0° 8°
