P-Channel Enhancement MOSFET
AO3401
■ Features
●V DS (V) =-30V
●I D =-4.2 A (V GS =-10V)
●R DS(ON) ＜ 50m Ω (V GS =-10V)
●R DS(ON) ＜ 65m Ω (V GS =-4.5V)
●R DS(ON) ＜ 120m Ω (V GS =-2.5V)大学英语四级分数线
1. Gatenescafe
2. Source
3. Drain
directorate■ Absolute Maximum Ratings Ta = 25℃
Unit:mm
SOT-23-3
AO3401
P-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃
■ Marking
■ Typical Characterisitics
0.00
5.0010.0015.0020.0025.00
0.00
1.00
2.00
copying3.00
4.00
5.00-V DS (Volts)
tingshuo>麟角凤嘴
新视野大学英语教案Fig 1: On-Region Characteristics
-I D (A )
246810
00.51 1.52 2.53
-V GS (Volts)
Figure 2: Transfer Characteristics
-I D (A )
2040
6080100120
0.00
2.00
4.00
6.00
8.00
10.00
-I D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage R D S (O N ) (Ω)
1.0E-06
1.0E-051.0E-041.0E-031.0E-021.0E-01
1.0E+001.0E+010.0
0.2
0.4
0.6
0.8
1.0
1.2
-V SD (Volts)
Figure 6: Body-Diode Characteristics
-
I
S (A )
0.8
11.21.41.61.80
255075100125150175林俊杰的英文歌
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N o r m a l i z e d O n -R e s i s t a n c e
10
305070901101301501701900
2
4
6
8
10
-V GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R D S (O N ) (m Ω)
P-Channel Enhancement MOSFET
AO3401
眼部彩妆
■盛行
Typical Characterisitics
01
23450
2
4
6
8
10
12
-Q g (nC)
Figure 7: Gate-Charge Characteristics
-V G S (V o l t s )
0200
400
600800100012001400
5
10
15
20
25
30
-
V DS (Volts)
Figure 8: Capacitance Characteristics
C a p a c i t a n c e (p F )
0.00001
0.00010.0010.010.11101001000
Pul Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z θJ A N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c e
0.1
1.0
10.0100.0
-
I D (A m p s )
P-Channel Enhancement MOSFET
AO3401
