WPM4803
Description
六级考试网Features
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PIN CONNECTIONS
14
WPM4803
P-Channel Enhancement Mode MOSFET
The WP M4803 is the Dual P -Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
The devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
-30V/-5A,R DS(ON)= 36m ȍ@V GS =- 10V -30V/-4A,R DS(ON)= 53\\\m ȍ@V GS =- 4.5V Super hig
h density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
弗里特Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC
LCD Display inverter
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Order information
3DUW 1XPEHU 3DUW 1XPEHU 6KLSSLQJ WPM 4803-8/TR SO P -8P 2500Tape&Reel
Marking Diagram and explain
= Date Code
= Specific Device Code WPM4803YYWW
YYWW WPM4803
WPM4803
Absolute Maximum Ratings
Pin Assignment
Pin S y mbol Description
1 S1 Source 1
2 G1 Gate 1
3 S2 Source 2
4 G2 Gate 2
5 D2 Drain 2
6 D2
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Drain 2 7 D1 Drain 1 8 D1
Drain 1 (T A =25 Unless otherwi noted)
кParameter S y mbol T y pical Unit
Drain-Source V oltage V DSS -30 V Gate –Source V oltage
V GSS ±20
V T A =25к-5Continuous Drain Current(T J =150)кT A =70к
I D -4.2
A
Puld Drain Current
I DM -20 A Continuous Source Current(Diode Conduction) I S -2.3 A T A =25к 2.8Power Dissipation
T A =70к
P D 1.8W Operating Junction Temperature T J -55/150кStorage Temperature Range
T STG -55/150кThermal Resistance-Junction to Ambient
R șJA
70
к/W
WPM4803Typical Performance Characteristis
(T A =25 Unless otherwi noted)
кParameter S y mbol
Conditions Min. T y p Max.Unit
=-250uA -1.0 -3.0 V
V V =-5D =-5.0A =-1.0A,V GS 2
Static
Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =-250uA -30
Gate Threshold V oltage V GS(th)V DS =V GS ,I D Gate Leakage Current
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I GSS DS =0V ,V GS =±20V ±100 nA
V DS =-24V ,V GS =0V -1
Zero Gate V oltage Drain Current I DSS V DS =-24V ,V GS =0V
T J =85к
-5
uA On-State Drain Current I D(on) V DS = -5V ,V GS GS =-10V ,I D V GS =-6.0V ,I D ȍ
Drain-Source On-Resistance R DS(on)V GS =-4.5V ,I D Forward Transconductance gfs V DS Diode Forward V oltage
V SD
I S Dynamic Total Gate Charge Q g 15 25
Gate-Source Charge Q gs Gate-Drain Charge Q gd
V DS =-15V ,V GS =-10V
I D = -5.0A
nC Input Capacitance C iss 680 Output Capacitance
C oss
120 Rever Transfer Capacitance C rss
V DS =-15V ,V GS =0V
f=1MHz
75
pF t d(on) 7 15
Turn-On Time t r 10 20
t d(off) 40 80 Turn-Off Time
t f V DD =-15V ,R L =15ȍI D Ł-1.0A,V GEN =-10V
R G =6ȍ 20 40
nS 3.8 =-10V
种子队-20
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大学生四六级
A 0.036 0.043
=-4.0A 0.064 0.074 =-4.6A 0.053 0.063 8 S一分钟英语自我介绍
5 =0V -0.79 - V 1-1.9=-5 0.029 0.042
V ,I -0.5
WPM4803
R D S O N R e s i s t a n c e (m o h m )
WPM4803
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