On-State Drain Current 1 I D(ON) V DS = 10V, V GS = 10V 50 A V GS = 4.5V, I D = 20A 11 16 Drain-Source On-State Resistance 1
R DS(ON) V GS = 10V, I D = 25A 7.5 9.5 m Forward Transconductance 1
g fs
V DS = 10V, I D = 25A
32
S
DYNAMIC
Input Capacitance C iss 1200 1800Output Capacitance
六一主持词开场白和结束语
C oss 600 1000Rever Transfer Capacitance C rss
V GS = 0V, V DS = 15V, f = 1MHz 350 500
pF Total Gate Charge 2 Q g 25 50 Gate-Source Charge 2 Q gs 15 Gate-Drain Charge 2 Q gd
V DS = 10V, V GS = 10V, I D = 25A
10
nC Turn-On Delay Time 2 t d(on) 6 16 Ri Time 2punkrock
t r V DS = 15V, R L = 1 120 250Turn-Off Delay Time 2
t d(off)
I D ≅ 50A, V GS = 10V, R GEN = 24
40 90
Fall Time 2
t f 105 200
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 °C)
Continuous Current I S 50
Puld Current 3 I SM 150 A
Forward Voltage 1 V SD
rmsI S = 25A, V GS = 0V
清明节扫墓演讲稿xuexi0.9
1.3union
V
Rever Recovery Time t rr 70 nS Peak Rever Recovery Current I RM(REC)
I F = I S , dl F /dt = 100A / µShanci
仰度200 A
Rever Recovery Charge
Q rr 0.043 µC
1Pul test : Pul Width ≤ 300 µc, Duty Cycle ≤ 2 .
2
Independent of operating temperature. 3
Pul width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P0903BDG”, DATE CODE or LOT #
shameOrders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
新年快乐用英语怎么说
