AP30P03D RVE3.0 臺灣永源微電子科技有限公司1
Description
The AP30P03D us advanced trench technology
to provide excellent R DS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for u as a
Battery protection or in other Switching application.
General Features
V DS = -30V I D =-30 A
R DS(ON) < 20mΩ @ V GS=10V
Application
prettyBattery protectioncounterproductive
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS) AP30P03D TO-252-3AP30P03D XXXX YYYY2500 Absolute Maximum Ratings (T C=25℃unless otherwi noted)
Symbol Parameter
Rating
Units 10s Steady State
V DS Drain-Source Voltage-30 V V GS Gate-Sou r ce Voltage ±20V
I D@T C=25℃Continuous Drain Current, V GS @ -10V1-30 A I D@T C=100℃Continuous Drain Current, V GS @ -10V1-22 A I D@T A=25℃Continuous Drain Current, V GS @ -10V1-13.4 -8.5 A I D@T A=70℃Continuous Drain Current, V GS @ -10V1-10.7 -6.8 A
I DM Puld Drain Current2-70 A
EAS Single Pul Avalanche Energy372.2 mJ
I AS Avalanche Current -38 A P D@T C=25℃Total Power Dissipation434.7 W P D@T A=25℃Total Power Dissipation4 5 2 W T STG Storage Temperature Range -55 to 150 ℃ T J Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 162 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Ca1 3.6 ℃/W
AP30P03D RVE3.0 臺灣永源微電子科技有限公司
2
J Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =-250uA -30 --- --- V △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D =-1mA
--- -0.022 --- V/℃
R DS(ON) Static Drain-Source On-Resistance 2 V GS =-10V , I D =-15A
--- 18 20 m Ω V GS =-4.5V , I D =-10A --- 25 32 V GS(th) Gate Threshold Voltage
V GS =V DS , I D =-250uA
-1.0 --- -2.5 V △V GS(th) V GS(th) Temperature Coefficient --- 4.6 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃
--- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±20V , V DS =0V --- --- ±100 nA gfs Forward Transconductance V DS =-5V , I D =-10A --- 5 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz
--- 13 --- Ω Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-15A ---
12.5 --- nC Q gs Gate-Source Charge ---
5.4 --- Q gd Gate-Drain Charge --- 5 --- T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V
,
R G =3.3, I D =-15A
--- 4.4 --- ns T r Ri Time --- 11.2 --- T d(off) Turn-Off Delay Time --- 34 --- T f Fall Time --- 18 --- C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 1345 --- pF C oss Output Capacitance --- 194 --- C rss Rever Transfer Capacitance --- 158 --- I S Continuous Source Current 1,5 V G =V D =0V , Force Current --- --- -35 A I SM Puld Source Current 2,5 --- --- -70 A V SD Diode Forward Voltage 2 V GS =0V , I S =-1A , T J =25℃ --- --- -1.2 V t rr Rever Recovery Time I F =-15A , dI/dt=100A/µs , T J =25℃
--- 12.4 --- nS Q rr
Rever Recovery Charge
---
5
---
nC
-30V P-Channel Enhancement Mode MOSFET
3
150 Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Rever Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J
4
如何提高自信心
Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform
abei5Package Mechanical Data
Dimensions
Millimeters Inches Ref.
Min.
Typ.
Max.Min.Typ.
Max.A A2B C D
E G H L
V1V2
2.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.053
0.065
5.90
6.30
L20°
6°
0.232
0.248
abhor6.80
0.2520.268
4.47 4.670.1760.1841.09 1.210.0430.0487°
1.35
1.650°
6°7°
B2 5.18 5.480.2020.216C20.440.580.0170.023D1E1
5.30REF
4.630.1820.209REF
B2
E H
B
G
L
C2
DETAIL A
DETAIL Aoutlets
A
英语周报
C
V 1
V 1
V 2
A 2
D
V 1
save是什么意思E1
学新娘化妆盘头D 1
L2
TO-252
Reel Spectification-TO-252
W
E
F
D 0P0
P2
P1
D 1
T
t1
B 0
K0
A0
5°
A
A
A B
B
B B
Dimensions
Millimeters Inches Ref.
Min.
Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0
B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.27
0.0090.011
都是戴茜惹的祸
0.0550.0633.90 4.106.900.27110P0
0.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.00
1.575
2.78
0.109
Φ329
Φ1320
16.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.80
40.20
1.567
1.583
