专利名称：ENHANCEMENT OF PROPERTIES OF THIN
FILM FERROELECTRIC MATERIALS
发明人：TOSHIKAZU NISHIDA,Antonio Guillermo
Acosta,John Anthony Rodriguez,Theodore
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申请号：US13243077
申请日：20110923
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公开日：
cd4
人体测量
20130328
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记录 英语专利附图：
奥美 猝死>independence day摘要：Methods are provided for enhancing properties, including polarization, of thin-
film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing pha at wafer or die level.
申请人：TOSHIKAZU NISHIDA,Antonio Guillermo Acosta,John Anthony Rodriguez,Theodore Sidney Moi
地址：Gainesville FL US,Gainesville FL US,Dallas TX US,Dallas TX US
国籍：US,US,US,US
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