专利名称：FORMATION OF BN FILM
发明人：NAGASE RYUICHI,SAKASHITA YUKIO 申请号：JP14148688
我只在乎你日语歌词申请日：19880610
江苏英语四级成绩查询
公开号：JPH01312073A
公开日：小语种哪个好学
19891215
专利内容由知识产权出版社提供veral什么意思
曲轴结构
右脑学习
如何提高语言表达能力摘要：PURPOSE:To easily coat the entire surface of an unheated substrate with a den high purity BN film by forming the BN film on the substrate by high temp. plasma CVD with BCl3, N2 and H2 as gaous starting materials. CONSTITUTION:A BN film is formed on a substrate (quartz member) in a furnace by high temp. plasma CVD such as high frequency induction plasma CVD with BCl3, N2 and H2 as gaous starting materials and Ar as gas tor plasma. The pref. flow rate of Ar is about 40-80l/min, that of H2 is about 0.5-6.0l/min, that of N2 is about 0.5-6.0l/min and that of BCl3 is about 10-50l/min. The desirable plate voltage is about 6-7kV and the desirable internal pressure of the furnace is about >=600Torr. It is not necessary to heat the substrate and a BN film having further improved transparency is formed by cooling the substrate.
taller快餐业申请人：NIPPON MINING CO LTD
hiper更多信息请下载全文后查看
