抹杀
专利名称：Bulk FinFET devicezuo wen
发明人：Roger Allen Booth, Jr.,William Paul
findchips>birch
Hovis,Jack Allan Mandelman
vincent什么意思申请号：US12028916
北京外语培训学校申请日：20080211
公开号：US07667248B2
公开日：
20100223
拿走专利内容由知识产权出版社提供
专利附图：
摘要：A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate
dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region
of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a cond source/drain in the fin on a cond side of the channel region; removing a portion of the substrate from under at least a portion of the first and cond source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.
申请人：Roger Allen Booth, Jr.,William Paul Hovis,Jack Allan Mandelman
unknown是什么意思地址：Rochester MN US,Rochester MN US,Flat Rock NC US
国籍：US,US,US连衣裙用英语怎么写>blossoming
代理机构：Schmeir, Oln & Watts
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