Rever conducting igbt

更新时间:2023-07-15 11:19:43 阅读: 评论:0

blakelively专利名称:Rever conducting igbt
绯闻女孩 第六季发明人:フィルシュ, フランク ディーター,ウェーバー,ドロテーア
ukr>日语同声传译申请号:JP2015139323say
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bitblt申请日:20150713
公开号:JP6080023B2
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商务英语毕业论文
20170215
专利内容由知识产权出版社提供
摘要:A rever-conducting IGBT includes a miconductor body having a drift region arranged between first and cond surfaces. The miconductor body further includes first collector regions arranged at the cond surface and in Ohmic contact with a cond electrode, backside emitter regions and in Ohmic contact with the cond electrode. In a horizontal direction substantially parallel to the first surface, the first collector regions and backside emitter regions define an rc-IGBT area. The miconductor body further includes a cond collector region of the cond conductivity type arranged at the cond surface and in Ohmic contact with the cond electrode. The cond collector region defines in the horizontal direction a pilot-IGBT area. The rc-IGBT area includes first miconductor regions in Ohmic contact with the first electrode and arranged between the drift region and first electrode. The pilot-IGBT area includes cond miconductor regions of the same conductivity type as the first miconductor regions.
申请人:インフィネオン テクノロジーズ アーゲー
地址:ドイツ連邦共和国 85579 ノイビーベルク アム カンペオン 1-12
国籍:DE
代理人:園田・小林特許業務法人更多信息请下载全文后查看北京会计培训学校

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