专利名称：Metal-insulator-metal (MIM) capacitor
伦敦奥运会吉祥物techniques
发明人：Yao-Wen Chang,Hsing-Lien Lin,Cheng-Yuanadult
Tsai,Chia-Shiung Tsai
单词思维导图
经典影视申请号：US14242227
元宵节英语手抄报申请日：20140401
公开号：US09257497B2
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低压电工操作证
如果我在天堂遇见你20160209
专利内容由知识产权出版社提供
专利附图：祝福用英语怎么说
摘要：Some embodiments relate to a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes a capacitor bottom metal (CBM) electrode, a high-k dielectric layer
arranged over the CBM electrode, and a capacitor top metal (CTM) electrode arranged over the high-k dielectric layer. A capping layer is arranged over the CTM electrode. A lower surface of the capping layer and an upper surface of the CTM electrode meet at an interface. Protective sidewalls are adjacent to outer sidewalls of the CTM electrode. The protective sidewalls have upper surfaces at least substantially aligned to the interface at which the upper surface of the CTM electrode meets the lower surface of the capping layer.
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
地址：Hsin-Chu TW
国籍：TW
代理机构：Eschweiler & Associates, LLC
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