专利名称：DIODE
容器英文themass发明人：NISTOR, Iulian,KOPTA, Arnost,WIKSTRÖM, Tobiasmelon是什么意思
申请号：EP08861619.8
申请日：20081219
公开号：EP2223342A1
公开日：
广州 江南西
antennae
20100901在过去的英文
专利内容由知识产权出版社提供
摘要：A diode (1) for fast switching applications compris a first layer (2) of a first conductivity type with a first main side (21) and a cond main side (22) opposite the first main side (21), a cond layer (3) of a cond conductivity type, which is arranged on the cond main side (22), a plurality of first zones (4) of the first conductivity type with a higher doping concentration than the first layer (2) and a plurality of cond zones (5) of the cond conductivity type, both of which zones are arranged alternately on the first main side (21). A first metal layer (6) is arranged on top of the first and cond zones (4, 5) on that side of the zones, which lies opposite the first layer (2), and a cond metal layer (7) is arranged on top of the cond layer (3) on that side of the cond layer (3), which lies opposite the first layer (2). The first layer (2) compris a first sublayer (23), which is formed by the first main sided part of the first layer (2), and a cond sublayer (24), which is formed by the cond main sided part of the first layer (2). A third layer (8) of the first conductivity type is arranged between the first and cond sublayer (23, 24). This third layer (8) has a higher doping concentration than the first layer (2) and a lower doping concentration than the first zones (4).
申请人：ABB Technology AG
briefing眉毛的画法地址：Affolternstras 44 8050 Zürich CH 国籍：CH
代理机构：ABB Patent Attorneys
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