专利名称：Ferroelectric random access memory
(FeRAM) array with gmented plate lines
that are electrically-isolated from each
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发明人：Tianhong Yan
申请号：US15391991
拜登接受总统候选人提名
the descendants申请日：20161228
公开号：US09972374B1
公开日：
20180515
专利内容由知识产权出版社提供
kiah>英语日常口语900句专利附图：
摘要：A ferroelectric random access memory (FeRAM) array includes (a) a first ction
汉译英在线翻译
decisionof FeRAM cells sharing a first plate line and a word line; and (b) a cond ction of FeRAM cells sharing a cond plate line and the word line, wherein the first plate line and the cond plate line are electrically unconnected, and wherein only the first ction of FeRAM cells or the cond ction of FeRAM cells, but not both, are lected for a read operation at any given time. In each ction of the FeRAM cells, a plate line lection cell connects the corresponding plate line to a plate line lection line. Each FeRAM cell in each ction is read or written over a pair of bit lines running in a direction transver to the word line of the ction, and the plate line lection line runs along a direction parallel to the bit lines.
maskchina申请人：AUCMOS Technologies USA, Inc.
地址：Santa Clara CA US
国籍：US
jealous是什么意思>麻烦的英文代理机构：VLP Law Group, LLP
代理人：Edward C. Kwok, Esq.
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