专利名称：SINGLE DIFFUSION BREAKS INCLUDING
STACKED DIELECTRIC LAYERS
发明人：Haiting Wang,Rinus Lee,Sipeng Gu,Yue Hu
申请号：US16994915
申请日：20200817
公开号：US20220052193A1
公开日：
20220217
卧龙岗大学
专利内容由知识产权出版社提供
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quotations专利附图：虚荣是什么意思
confusion
摘要：Structures for a single diffusion break and methods of forming a structure for a single diffusion break. A cut is formed in a miconductor fin. A single diffusion break includes a first dielectric layer in the cut and a cond dielectric layer over the first
dielectric layer. The first dielectric layer is comprid of a first material, and the cond dielectric layer is comprid of a cond material having a different composition than the first material. The cond dielectric layer includes a first portion over the first dielectric layer and a cond portion over the first portion. The first portion of the cond dielectric layer has a first horizontal dimension, and the cond portion of the cond dielectric layer has a cond horizontal dimension that is greater than the first horizontal dimension.gpi
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申请人：GLOBALFOUNDRIES U.S. Inc.
中秋节英文地址：Santa Clara CA UScarl
国籍：US
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