什么是AFORS-HET
找男朋友最快的方法AFORS-HET (Automat FOR Simulation of HETerostructures) is a numerical simulation tool, which allows to model/simulate heterojunction miconductor devices. An arbitrary quence of miconducting layers can be modelled, specifying layer properties and interface properties, i.e. the defect distribution of states (DOS). At the boundary, voltage or current controlled metal-miconductor contacts (MS contacts) or a metal-insulator-miconductor contact (MIS contact) can be chon. Sub-bandgap photon absorption can be simulated by specification of optical capture cross ctions. The program solves the one dimensional miconductor equations using Shockley-Read-Hall recombination statistics, (1) for thermodynamic equilibrium, (2) for steady-state conditions under an external illumination and/or bias voltage (3) for small additional sinusoidal perturbations of the applied bias/illumination. Thus the internal cell characteristics (band diagrams, local generation, recombination, currents, carrier densities and pha shifts within the device) can be calculated for various external boundary conditions.. Furthermore, a variety of common characterisation techniques can be simulated, i.e. current-voltage (C-V), quantum 达芬奇的恶魔第二季
efficiency (IQE, EQE), impedance (IMP), voltage and temperature dependant capacitance (C-V, C-T), intensity and field dependant surface photovoltage (SPVi, SPVv), photo- and electro-luminescence (PEL), electron beam induced current (EBIC), electrical detected magnetic resonance (EDMR). Also analytical forms describing a measurement can implemented and compared to the numeric ones (IQEanalytic) A ur-friendly interface allows to visuali, store and compare all aspects within your simulations. Furthermore, general parameter variations can be performed. New numerical modules and new measurements may be added by external urs (open-source on demand).
如何获得帮助
We tried to equip this software with a ur-friendly interface, that is mostly lf explaining. We hope, that there is no need for reading the online help, since most program options are obvious, if you have already ud similar programs like PC1D or SCAPS. If you are however confud anywhere in the program press F1 to gain context nsitive help for the current program window.
What‘s new?
version 2.0:
calculation mode transient was included
veral major and minor bugs fixed
version 1.2:
It is now possible to perform a multidimensional parameter fit on measurement curves
External circuits can now be applied
The program now distinguishes between veral calculation modes (Eq, DC, AC)
veral major and minor bugs fixed
version 1.1:
You can now customi the program by choosing different optical and numerical calculation models
In front and behind the cell, optical layers can be defined, that influence the generation rate inside the structure, as multiple coherent/incoherent reflections can be calculated, choosing the optical model multiple reflections and coherence. It can be lected in the ttings window.
the quence of grid points is now editable by the ur via the ttings window
Optical properties of the structure are now defined by nk-files and not anymore by alpha-files. When loading structures created with program version 1.0 be sure to check that all layers have the right optical files associated.
misimaNew measurents IQE analytic, SPV intensity, PES and EDMR are introduced, the old ones have been improved. New measurement methods can be added by an external ur (open source on demand).
cranesAC calculation now is not only available during some measurements. AC voltage and frequency can be applied anytime as external parameters
Thermionic-Emission and Drift-Diffusion, are now not interface properties, but different numerical models.
hetero structure files (*.het) and graphical output files (*.res, *.rac, *.iv, *.qe, *.iqean, *.adm, *.imp, *.cv, *.ct, *.spvs, *.spvv, *.spvi, *.ebic, *.pel, *.edmr, *.var, *.spek) can be opened directly from the Windows Explorer when the file type is associated with AFORS-HET.
The handling of complex graphs has been improved
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veral major and minor bugs fixed
compatibility: unfortunately all graphical output files of program version 1.0 cannot be loaded with the new program version, due to improvements made to the file format.
Known issues and planned improvements
We are well aware that the program still needs a lot of development work. The following improvements and bugfixes are being developed at the moment:
New developments:
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- a periodic modulation of the light intensity will be available
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- correlated dangling bond defect distributions will be implemented
- a numerical model for Schottky-Bardeen contacts will be implemented
outofwork- Fermi-Dirac statistics will be implemented
英语短篇小故事- the defect-pool model to treat a-Si:H layers will be implemented
cooky0 bugfixes:
-pha shifts in the AC-voltage cell results should be continuous and not distracted by +-180?pha jumps (minor bug)
Numerical Models
AFORS-HET builds a discrete t of gridpoints at which the miconductor equations are being solved. There are 4 different types of gridpoints (bulk point, interface point, first interface point and last interface point). Even if a gridpoint is called an interface point, it is never located exactly at the interface, but always a very small distance away from it. This distance can be specified within the
