专利名称：Focud ion beam deposition using TMCTS 发明人：Hiroko Nakamura,Haruki Komano,Kazuyoshi Sugihara,Keiji Horioka,Mitsuyo Kariya,Soichi
really怎么读Inoue,Ichiro Mori,Katsuya Okumura,Tadahiro
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Takigawa,Toru Watanabe,Motosuke
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Miyoshi,Yuichiro Yamazaki,Haruo Okano
申请号：US08/420153
申请日：19950411
北京公安大学分数线公开号：US05639699A
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公开日：discount
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专利内容由知识产权出版社提供
摘要：According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or clo to the bump defect, forming a cond thin film on the bump defect and the first thin film to flatten an upper surface of the cond thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material
different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
申请人：KABUSHIKI KAISHA TOSHIBA
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P
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