Major Ratings and Characteristics I T(AV)
Sinusoidal 70
A
在线朗读
waveform
I RMS
(*)
75A V RRM / V DRM 1200, 1600V I TSM 1400
A V T @ 100 A, T J = 25°C
1.4V dv/dt 500V/µs di/dt 150A/µs T J
- 40 to 125
°C
Characteristics
70TPS..
Units
Super-247
relatively
Description/ Features
SAFE IR ries of silicon controlled rectifiers are specifically designed for high and medium power switching and pha control appli-cations.
Typical applications are in input rectification (soft start) or AC-Switches or high current crow-bar as well as others pha-control circuits.
The products are designed to be ud with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
Package Outline
Range PHASE CONTROL SCR
1
Bulletin I2164 rev. A 10/04
SAFE IR Series
70TPS..
(*) Lead current limitation
查询70TPS12供应商
270TPS.. SAFE IR Series
Bulletin I2164 Rev. A 10/04
I T(AV)
Max. Average On-state Current
70A
@ T C = 82° C, 180° conduction half sine wave I T(RMS)Max. Continuous RMS
75
Lead current limitation
On-state Current As AC switch
I TSM Max. Peak One Cycle Non-Repetitive 1200A
10ms Sine pul, rated V RRM applied Initial Surge Current 140010ms Sine pul, no voltage reapplied T J = T J max.
I 2t
Max. I 2t for Fusing
7200A 2s 10ms Sine pul, rated V RRM applied 10200
11月英文缩写10ms Sine pul, no voltage reapplied I 2√t
Max. I 2√t for Fusing
102000A 2√s t = 0.1 to 10ms, no voltage reapplied V T(TO)1Low Level Value of Threshold
0.916
V T J = 125°C
Voltage
V T(TO)2High Level Value of Threshold
1.21
Voltage
r t1
Low Level Value of On-state 4.138m Ω
Slope Resistance
r t2High Level Value of On-state 3.43
Slope Resistance
V TM Max. Peak On-state Voltage 1.4V @ 100A, T J = 25°C di/dt Max. Rate of Ri of Turned-on Current 150A/µs T J = 25°C I H Max. Holding Current 200mA
T J = 25°C
I L Max. Latching Current 400I RRM /Max. Rever and Direct 1.0mA
T J = 25°C I DRM Leakage Current 15T J = 125°C
dv/dt
Max. Rate of Ri
500
V/µs
T J = 125°C
Voltage Ratings
Part Number
Absolute Maximum Ratings
Parameters
70TPS..
Units
Conditions
V R = rated V RRM / V DRM
V RRM / V DRM , max. repetitive V RSM , maximum non repetitive
I RRM / I DRM peak and off-state voltage
peak rever voltage
125°C V
lackofV
mA
70TPS121200130015
hereby
70TPS16
1600
1700
3
70TPS.. SAFE IR Series
Bulletin I2164 Rev. A 10/04exhaust
P GM Max. peak Gate Power 10W
t = 30µs
P G(AV)Max. average Gate Power 2.5I GM
Max. peak Gate Current
2.5A - V GM Max. peak negative Gate Voltage 10V
V GT
Max. required DC Gate Voltage 4.0T J = - 40°C Anode supply = 6V to trigger
1.5T J = 25°C resistive load
1.1
T J = 125°C
I GT
Max. required DC Gate Current 270mA
T J = - 40°C to trigger
100T J = 25°C 80
T J = 125°C
V GD Max. DC Gate Voltage not to trigger 0.25V T J = 125°C, V DRM = rated value
I GD
Max. DC Gate Current not to trigger
6
mA
Parameters
70TPS..
Units
Conditions
Triggering
Thermal-Mechanical Specifications
T J Max. Junction Temperature Range - 40 to 125°C
T stg
Max. Storage Temperature Range
- 40 to 150R thJC Max. Thermal Resistance Junction
0.27
°C/W DC operation
to Ca
R thJA Max. Thermal Resistance Junction
40
to Ambient
R thCS Max. Thermal Resistance Ca
0.2Mounting surface, smooth and gread
to Heatsink wt Approximate Weight 6 (0.21)g (oz.)T
Mounting Torque
Min. 6 (5)Kg-cm Max.
12 (10)
(lbf-in)
Ca Style
Super-247
Parameters
70TPS..
Units
Conditions
Sine half wave conduction
Rect. wave conduction Device Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o 70TPS
0.078
0.092animals英语怎么读
0.117
0.172
0.302
0.053
0.092
0.125
0.180
0.306
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC)
470TPS.. SAFE IR Series
Bulletin I2164 Rev. A 10/
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Average On-state Current (A)M a x i m u m A l l o w a b l e C a s e t e m p e r a t u r e (°C )
Average On-state Current (A)M a x i m u m A l l o w a b l e C a s e t e m p e r a t u r e (°C )
Average On-state Current (A)
M a x i m u m A v e r a g e O n -s t a t e P o w e r L o s s (W )
Average On-state Current (A)
M a x i m u m A v e r a g e O n -s t a t e P o w e r L o s s (W )
Number Of Equal Amplitude Half Cycle Current Puls (N)
P e a k H a l f S i n e W a v e O n -s t a t e C u r r e n t (A )
Pul Train Duration (s)
P e a k H a l f S i n e W a v e O n -s t a t e C u r r e n t (A )
500
60070080090010001100120013001
10100
500600
7008009001000
我想学美容11001200
13001400
15000.01
0.1
1
70
809010011012013001020304050607080
0204060801001201400
10203040
50607060708090100110
1201300
10203040506070
80900
イモウトノカタチ306090120150015
30456075
5
70TPS.. SAFE IR Series
Bulletin I2164 Rev. A 10/04
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - GateCharacteristics
Fig. 9 - Thermal Impedance Z thJC Characteristics
Instantaneous On-state Voltage (A)
I n s t a n t a n e o u s O n -s t a t e C u r r e n t (A )
Instantaneous Gate Current (A)I n s t a n t a n e o u s G a t e V o l t a g e (V )
Square Wave Pul Duration (s)
T r a n s i e n t T h e r m a l I m p e d a n c e Z t h J C (°C /W )
0.010.1
1
0.0001
0.001
0.010.1110
冬菇的营养价值
110
100
10000.5
1 1.5
2 2.53
3.5
0.11
10
1000.001
0.01
0.11101001000
