专利名称：REACTIVE ION ETCHING METHOD OF SILICON
hini
发明人：HIRAYAMA TERUMINE
申请号：JP5536184
go vern ment
申请日：19840322
heartbroken公开号：JPS60198729A
behave造句公开日：成人高考满分作文>comparewith
如何突破英语
烫发护理19851008
giobe
wve
专利内容由知识产权出版社提供
摘要：PURPOSE:To etch even polycrystalline silicon containing an impurity, such as P, As, etc. lectively according to a fine pattern with high accuracy by using a gas, in which hydrogen is added to a chlorine group gas, or a hydrogen compound gas of chlorine as an etching gas. CONSTITUTION:A gas in which hydrogen is added to a chlorine group gas or a hydrogen compound gas of chlorine is employed as an etching gas in a reactive ion etching method for silicon. When polycrystalline silicon, which is formed on an silicon oxide SiO2 foundation layer and to which phosphorus is thermally diffud, is etched, SiCl4 gas is introduced into a reaction vesl in quantity of 40SCCM, introducing power is brought to 0.2W/cm<2>, gas pressure is brought to 0.05Torr, H2 gas is added to SiCl4 gas, and polycrystalline silicon is etched by reactive ions. The anisotropy of etching is promoted at that time. That is, the degree of progress of etching in the thickness direction of a polycrystalline silicon layer is made remarkably larger than that in the surface direction.
申请人：SONY KK
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