sam怎么读专利名称：IMPLANT BEAM UTILIZATION IN AN IONwhen是什么意思中文
IMPLANTER
发明人：Cheng-Hui Shen,Donald Wayne Berrian,Jiong
adenovirusChen
旋转木马 英文申请号：US11868851
申请日：20071008
lei公开号：US20090090876A1
birdie>shortof公开日：
masonry
20090409
专利内容由知识产权出版社提供
专利附图：
摘要：To lect a scan distance to be ud in scanning a wafer with an implant beam, a do distribution along a first direction is calculated bad on size or intensity of the
implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a cond direction in multiple paths. A relative velocity profile along the cond direction is determined bad on the do distribution. Do uniformity on the wafer is calculated bad on the wafer being scanned using the relative velocity profile and the determined do distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated do uniformity meets one or more uniformity criteria.
信令申请人：Cheng-Hui Shen,Donald Wayne Berrian,Jiong Chen
地址：Taiwan CN,Topsfield MA US,San Jo CA US
国籍：CN,US,US
dcm更多信息请下载全文后查看
