IRFR/U9024N
PRELIMINARY
HEXFET ® Power MOSFET
6/26/97
Parameter
Typ.
Max.
Units
R θJC Junction-to-Ca
––– 3.3R θJA Junction-to-Ambient (PCB mount)**–––50°C/W
R θJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -Pa k T O -252A A
I-Pa k TO -251AA
l Ultra Low On-Resistance l P-Channel
l Surface Mount (IRFR9024N)l Straight Lead (IRFU9024N)l Advanced Process Technology l Fast Switching
l
无界限Fully Avalanche Rated
Description
温床
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ -10V -11I D @ T
C = 100°C Continuous Drain Current, V GS @ -10V -8A I DM
Puld Drain Current -44P D @T C = 25°C Power Dissipation 38W Linear Derating Factor 0.30W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pul Avalanche Energy 62mJ I AR Avalanche Current
-6.6A E AR Repetitive Avalanche Energy 3.8mJ dv/dt Peak Diode Recovery dv/dt -10
V/ns T J Operating Junction and
-55 to + 150T STG
Storage Temperature Range
Soldering Temperature, for 10 conds
300 (1.6mm from ca )
°C
Absolute Maximum Ratings
holisterFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for u in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor pha, infrared, or wave soldering techniques.The straight lead version (IRFU ries) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
PD - 9.1506
V DSS = -55V R DS(on) = 0.175Ω
I D = -11A
S
Dladen
G
IRFR/U9024N
研究生考试总分
Source-Drain Ratings and Characteristics
美丽心灵下载Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L S of D-PAK is measured between6级答案
lead and center of die contact
Starting T J = 25°C, L = 2.8mH
R G = 25Ω, I AS = -6.6A. (See Figure 12)
Repetitive rating; pul width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -6.6A, di/dt ≤ 240A/µs, V DD ≤ V (BR)DSS , T J ≤ 150°C
Pul width ≤ 300µs; duty cycle ≤ 2%.
Electrical Characteristics @ T J = 25°C (unless otherwi specified)
Us IRF9Z24N data and test conditions.
IRFR/U9024N
Vs. Temperature
IRFR/U9024N
河北开学时间公布
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Forward Voltage
0100
200
300
400
500
600putinto
700
1
10
100
C , C a p a c i t a n c e (p F )
D S
V , Drain-to-Source Voltage (V)04
8
12
16
20
5
10
15
20
25
G
G S -V , G a t e -t o -S o u r c e V o l t a g e (V )
Q , Total G ate C harge (nC)
IRFR/U9024N
高考资讯Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ca
Fig 9. Maximum Drain Current Vs.Ca Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
R V DD
V V
