FDMC7660S N-Channel Power Trench ® SyncFET ™
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D
D
D
D S
S
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Power 33
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® SyncFET ™
2
©2009 Fairchild Semiconductor Corporation g FS
Forward Transconductance
true blueV DD = 5 V, I D = 20 A
129
S Dynamic Characteristics
zenC iss Input Capacitance V DS = 15 V, V GS = 0 V,f = 1 MHz
32504325pF C oss Output Capacitance
aboutyou12601680pF C rss Rever Transfer Capacitance
105160
pF R g
Gate Resistance
0.8
sweet baby是什么意思中文
Ω
宝贝鱼翻译Switching Characteristics
t d(on)Turn-On Delay Time V DD = 15 V, I D = 20 A,V GS = 10 V, R GEN = 6 Ω
1425ns t r Ri Time
510ns t d(off)Turn-Off Delay Time 3454ns t f Fall Time
3.910ns Q g(TOT)Total Gate Charge V GS = 0 V to 10 V
V DD = 15 V
I D = 20 A
4766nC Total Gate Charge V GS = 0 V to 4.5 V 2129
nC Q gs Total Gate Charge
9.5nC Q gd
Gate to Drain “Miller” Charge
5
nC
Drain-Source Diode Characteristics
V SD Source to Drain Diode Forward Voltage V GS = 0 V, I S = 20 A (Note 2)
0.8 1.2V V GS = 0 V, I S = 1.9 A (Note 2)0.40.7t rr Rever Recovery Time I F = 20 A, di/dt = 300 A/µs
3150ns Q rr
Rever Recovery Charge
39
62
nC
NOTES:
1. R θJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while R θCA is determined by the ur's board design.
2. Pul Test: Pul Width < 300 µs, Duty cycle < 2.0 %.
3. Starting T J = 25o C; N-ch: L = 1 mH, I AS = 16 A, V DD = 27 V, V GS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pul ocurrence only. No continuous rating is implied.
a. 53°C/W when mounted on a 1 in 2 pad of 2 oz copper
shadowgun
b. 125°C/W when mounted on a minimum pad of 2 oz copper
united
® SyncFET
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® SyncFET
™
® SyncFET
™
