FDMS7692 N-Channel PowerTrench ® MOSFET
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S D
D D D
® MOSFET
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
V GS = 10 V, I D = 13 A, T J = 125 °C 9.011
中国梦作文600字g FS
Forward Transconductance
四级报名V DS = 5 V, I D = 13 A
68
S C iss Input Capacitance V DS = 15 V, V GS = 0 V,f = 1 MHz
10151350pF C oss Output Capacitance
325435pF C rss Rever Transfer Capacitance
4565pF R g
Gate Resistance
1.0
一对一在线2.0
Ω
t d(on)Turn-On Delay Time V DD = 15 V, I D = 13 A,V GS = 10 V, R GEN = 6 Ω
816ns t r Ri Time
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2.710ns t d(off)Turn-Off Delay Time
17rgd
31ns t f Fall Time
2.310ns Q g Total Gate Charge V GS = 0 V to 10 V
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V DD = 15 V,
I D = 13 A 15
22nC Q g Total Gate Charge V GS = 0 V to 4.5 V 7
10
nC Q gs Gate to Source Charge 3.4nC Q gd
Gate to Drain “Miller” Charge
1.9
nC
V SD Source to Drain Diode Forward Voltage V GS = 0 V, I S = 2.1 A (Note 2)
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0.75 1.1V V GS = 0 V, I S = 13 A (Note 2)0.84
1.2t rr Rever Recovery Time I F = 13 A, di/dt = 100 A/μs 21
34ns Q rr Rever Recovery Charge 612nC t rr Rever Recovery Time I F = 13 A, di/dt = 300 A/μs
1731ns Q rr
Rever Recovery Charge
12
21
nC
Notes :
1. R θJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while R θCA is determined by the ur's board design.
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2. Pul Test: Pul Width < 300 μs, Duty cycle < 2.0%.
3. Starting T J = 25 °C, L = 0.3 mH, I AS = 12 A, V DD = 27 V, V GS = 10 V.
a. 50 °C/W when mounted on a 1 in 2 pad of 2 oz copper.
b. 125 °C/W when mounted on a minimum pad of 2 oz copper.
MOSFET
MOSFET
MOSFET
