专利名称：Multi-step potentiostatic/galvanostatic
plating control
发明人：Dean S. Chung,Jof W. Korejwa,Erick G.
免费翻译器Waltongivebirth
申请号：US09469120
申请日：19991221
公开号：US06409903B1
公开日：
make的用法20020625
专利内容由知识产权出版社提供
专利附图：
初次见面英语>li an摘要：A method and apparatus are provided for the electroplating of a substrate such as a miconductor wafer which provides a uniform electroplated surface and minimizes
mosterthumbsupbum-through of a ed layer ud on the substrate to initiate electroplating. The method and apparatus of the invention us a specially defined multistep electroplating process wherein, in one aspect, a voltage below a predetermined threshold voltage is applied to the anode and cathode for a first time period followed by applying a current to the anode and cathode for a cond time period the current producing a voltage below the predetermined threshold voltage. In another aspect of the invention, a current is applied to the anode and cathode substrate which current is preprogrammed to ramp up to a current value from a first current value which current produces a voltage below a predetermined threshold voltage. Electroplated articles including copper electroplated miconductor wafers made using the apparatus and method of the invention are also provided.
spratly申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
disneyland的意思代理机构：DeLio & Peterson, LLC
代理人：John J. Tomaszewski,Richard M. Kotulak
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