专利名称：TURN-OFF-THYRISTOR
发明人：SUGAWARA FUMIHIKO,HARUHARA YOSHIO,HIRAI MINORU大学英语四级成绩
申请号：JP7253890
申请日：19900322
公开号：JPH03272178A
公开日：
高一英语必修一onetwo19911203february是什么意思
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摘要：PURPOSE:To obtain an arc suppressing SCR adapted for cutting off a large current by a method wherein carrier extraction resistance is sharply reduced when an arc is suppresd without reducing a transistor who ba region is located just under a gate electrode in current amplification factor. CONSTITUTION:In a PNPN structure, low resistive layers B1 and C are provided onto a ba layer B2 without reducing a ba resistance or a transistor ction in current amplification factor and having an adver effect on a firing performance, and carriers reaching to the ba layer B2 penetrating the ba layer B1 are mostly made to pass through. A gap D is provided inside the layer B1 where the layer C is not located. The layer D is made to rve as a region where majority carriers from an emitter layer E2 are made to travel high in density when a SCR is in operation, and minority carriers are recombined in the layer D so as to be prevented from reaching to the ba layer B2. By this constitution, an arc suppressing SCR capable of cutting off a large current as improved in a firing performance and an ON state both in tradeoff relation to the suppression of arc can be obtained.
petrol申请人：SUGAWARA FUMIHIKO,HARUHARA YOSHIO,SHINDENGEN ELECTRIC MFG CO LTD
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