smart media

-1-

PartNumberDecoder

LastUpdated:August2009

(K)

ash:9

lassification

(SLC:SingleLevelCell,MLC:MultiLevelCell,

SM:SmartMedia,S/B:SmallBlock)

1:SLC1ChipXDCard

2:SLC2ChipXDCard

3:4bitMLCMono

4:SLC4ChipXDCard

5:MLC1ChipXDCard

6:MLC2ChipXDCard

7:SLCmoviNAND

8:MLCmoviNAND

9:4bitMLCODP

A:3bitMLCMONO

B:3bitMLCDDP

C:3bitMLCQDP

F:SLCNormal

G:MLCNormal

H:MLCQDP

K:SLCDieStack

L:MLCDDP

M:MLCDSP

N:SLCDSP

O:3bitMLCODP

P:MLCODP

Q:SLCODP

R:MLC12-diestack

S:MLC6DieStack

T:SLCSINGLE(S/B)

U:MLC16DieStack

W:SLC4DieStack

4~y

12:512M16:16M28:128M

32:32M40:4M56:256M

64:64M80:8M1G:1G

2G:2G4G:4G8G:8G

AG:16GBG:32GCG:64G

DG:128GEG:256GFG:256G

GG:384GHG:512GLG:24G

NG:96GZG:48G00:NONE

logy

0:Normal(x8)1:Normal(x16)

C:CatridgeSIPD:DDR

M:moviNANDN:moviNANDFAB

P:moviMCPT:PremiumeSSD

Z:SSD

zation

0:NONE8:x8

6:x16

A:1.65V~3.6VB:2.7V(2.5V~2.9V)

C:5.0V(4.5V~5.5V)D:2.65V(2.4V~2.9V)

E:2.3V~3.6VR:1.8V(1.65V~1.95V)

Q:1.8V(1.7V~1.95V)T:2.4V~3.0V

S:3.3V(3V~3.6V/VccQ1.8V(1.65V~1.95V)

U:2.7V~3.6VV:3.3V(3.0V~3.6V)

W:2.7V~5.5V,3.0V~5.5V0:NONE

0:Normal

1:DualnCE&DualR/nB

3:Tri/CE&TriR/B

4:QuadnCE&SingleR/nB

5:QuadnCE&QuadR/nB

6:6nCE&2RnB

7:8nCE&4RnB

8:8nCE&2RnB

9:1stblockOTP

A:MaskOption1

L:Lowgrade

tion

M:1stGeneration

A:2ndGeneration

B:3rdGeneration

C:4thGeneration

D:5thGeneration

E:6thGeneration

Y:25thGeneration

Z:26thGeneration

NANDFlashCodeInformation(1/3)

K9XXXXXXXX-XXXXXXX

1234

5

6789161718

-2-

PartNumberDecoder

LastUpdated:August2009

11."─"

e

8:TSOP1(Lead-Free,Halogen-Free,CU)

9:56TSOP1(Lead-Free,Halogen-Free,CU)

A:COB

B:FBGA(Halogen-Free,Lead-Free)

D:63-TBGA

E:ISM(Lead-Free,Halogen-Free)

F:WSOP(Lead-Free)G:FBGA

H:BGA(Lead-Free,Halogen-Free)

I:ULGA(Lead-Free)(12*17)

J:FBGA(Lead-Free)

K:ULGA(Lead-Free,Halogen-Free)(12*17)

L:ULGA(Lead-Free,Halogen-Free)(14*18)

M:52-ULGA(Lead-Free,Halogen-Free)(13*18)

P:TSOP1(Lead-Free)

Q:TSOP2(Lead-Free)

R:56-TSOP1(Lead-Free,Halogen-Free)

S:TSOP1(Lead-Free,Halogen-Free)

T:WSOP(Lead-Free,Halogen-Free)

U:COB(MMC)

V:WSOPW:Wafer

Y:TSOP1Z:WELP(Lead-Free)

C:CommercialI:Industrial

S:SmartMedia

B:SmartMediaBLUE

0:NONE(ContainingWafer,CHIP,BIZ,Exception

handlingcode)

NANDFlashCodeInformation(2/3)

K9XXXXXXXX-XXXXXXX

1234

5

6789161718

erBadBlock

B:IncludeBadBlock

D:DaisychainSample

K:SpecialHandling

L:1~5BadBlock

N:ini.0blk,add.10blk

S:AllGoodBlock

0:NONE(ContainingWafer,CHIP,BIZ,Exception

handlingcode)

-ProgramVersion

0:None

Serial(1~9,A~Z)

-3-

PartNumberDecoder

LastUpdated:August2009

NANDFlashCodeInformation(3/3)

K9XXXXXXXX-XXXXXXX

1234

5

6789161718

-Commontoallproducts,exceptofMaskROM

-DividedintoTAPE&REEL(InMaskROM,dividedintoTRAY,AMMOPackingSeparately)

MMODULEOtherPacking

PMODULETAPE&REEL

Module

SStack

0(Number)Other(Tray,Tube,Jar)

TTAPE&REEL

Component

NewMarkingPackingTypeDivide

gType

17~er"CustomerListReference"

zhangshengheng@

三星flash命名规则

如何根据Samsung的NandFlash的芯片型号(PartNumber)读懂芯片详细信息+举例K9GAG08U0M说明

【Samsung：NANDFlashCodeInformation】

三星的NANDFlashCodeInformation：

/global/business/miconductor/?fmly_id=672&partnum=K9

GAG08U0M

中的PartNumberDecoder

拷贝出来如下：

NANDFlashCodeInformation

(K)

ash:9

lassification

(SLC:SingleLevelCell,MLC:MultiLevelCell,

SM:SmartMedia,S/B:SmallBlock)

1:SLC1ChipXDCard

2:SLC2ChipXDCard

3:4bitMLCMono

4:SLC4ChipXDCard

5:MLC1ChipXDCard

6:MLC2ChipXDCard

7:SLCmoviNAND

8:MLCmoviNAND

9:4bitMLCODP

A:3bitMLCMONO

B:3bitMLCDDP

C:3bitMLCQDP

F:SLCNormal

G:MLCNormal

H:MLCQDP

K:SLCDieStack

L:MLCDDP

M:MLCDSP

N:SLCDSP

O:3bitMLCODP

P:MLCODP

Q:SLCODP

zhangshengheng@

R:MLC12-diestack

S:MLC6DieStack

T:SLCSINGLE(S/B)

U:MLC16DieStack

W:SLC4DieStack

4~y（注：实际单位应该是bit，而不是Byte）

12:512M16:16M28:128M

32:32M40:4M56:256M

64:64M80:8M1G:1G

2G:2G4G:4G8G:8G

AG:16GBG:32GCG:64G

DG:128GEG:256GFG:256G

GG:384GHG:512GLG:24G

NG:96GZG:48G00:NONE

logy

0:Normal(x8)1:Normal(x16)

C:CatridgeSIPD:DDR

M:moviNANDN:moviNANDFAB

P:moviMCPT:PremiumeSSD

Z:SSD

zation

0:NONE8:x8

6:x16

A:1.65V~3.6VB:2.7V(2.5V~2.9V)

C:5.0V(4.5V~5.5V)D:2.65V(2.4V~2.9V)

E:2.3V~3.6VR:1.8V(1.65V~1.95V)

Q:1.8V(1.7V~1.95V)T:2.4V~3.0V

S:3.3V(3V~3.6V/VccQ1.8V(1.65V~1.95V)

U:2.7V~3.6VV:3.3V(3.0V~3.6V)

W:2.7V~5.5V,3.0V~5.5V0:NONE

0:Normal

1:DualnCE&DualR/nB

3:Tri/CE&TriR/B

4:QuadnCE&SingleR/nB

5:QuadnCE&QuadR/nB

6:6nCE&2RnB

7:8nCE&4RnB

8:8nCE&2RnB

9:1stblockOTP

A:MaskOption1

L:Lowgrade

tion

M:1stGeneration

A:2ndGeneration

zhangshengheng@

B:3rdGeneration

C:4thGeneration

D:5thGeneration

E:6thGeneration

Y:25thGeneration

Z:26thGeneration

11."─"

e

8:TSOP1(Lead-Free,Halogen-Free,CU)

9:56TSOP1(Lead-Free,Halogen-Free,CU)

A:COB

B:FBGA(Halogen-Free,Lead-Free)

D:63-TBGA

E:ISM(Lead-Free,Halogen-Free)

F:WSOP(Lead-Free)G:FBGA

H:BGA(Lead-Free,Halogen-Free)

I:ULGA(Lead-Free)(12*17)

J:FBGA(Lead-Free)

K:ULGA(Lead-Free,Halogen-Free)(12*17)

L:ULGA(Lead-Free,Halogen-Free)(14*18)

M:52-ULGA(Lead-Free,Halogen-Free)(13*18)

P:TSOP1(Lead-Free)

Q:TSOP2(Lead-Free)

R:56-TSOP1(Lead-Free,Halogen-Free)

S:TSOP1(Lead-Free,Halogen-Free)

T:WSOP(Lead-Free,Halogen-Free)

U:COB(MMC)

V:WSOPW:Wafer

Y:TSOP1Z:WELP(Lead-Free)

C:CommercialI:Industrial

S:SmartMedia

B:SmartMediaBLUE

0:NONE(ContainingWafer,CHIP,BIZ,Exception

handlingcode)

NANDFlashCodeInformation(2/3)

K9XXXXXXXX-XXXXXXX

1718

erBadBlock

B:IncludeBadBlock

D:DaisychainSample

K:SpecialHandling

L:1~5BadBlock

N:ini.0blk,add.10blk

S:AllGoodBlock

0:NONE(ContainingWafer,CHIP,BIZ,Exception

zhangshengheng@

handlingcode)

-ProgramVersion

0:None

Serial(1~9,A~Z)

gType

-Commontoallproducts,exceptofMaskROM

-DividedintoTAPE&REEL(InMaskROM,dividedintoTRAY,AMMOPackingSeparately

17~er"CustomerListReference"

【举例说明】

K9GAG08U0M-PCB0

1718

K9GAG08U0M详细信息如下:

(K)

ash:9

lassification

(SLC:SingleLevelCell,MLC:MultiLevelCell,

SM:SmartMedia,S/B:SmallBlock)

G:MLCNormal

4~y

AG:16G(Note:这里单位是bit而不是byte，因此实际大小是16Gb=2GB)

logy

0:Normal(x8)

zation

0:NONE8:x8

U:2.7V~3.6V

0:Normal

tion

M:1stGeneration

11."─"

e

P:TSOP1(Lead-Free)

C:Commercial

zhangshengheng@

erBadBlock

B:IncludeBadBlock

-ProgramVersion

0:None

整体描述就是：

K9GAG08U0M是，三星的MLCNandFlash，工作电压为2.7V~3.6V，x8（即I/O是8位），大小是2GB

（16Gb），TSOP1封装。

zhangshengheng@ix海力士

H27XXXXXXXXX-XX

(1)HYNIX

(2)PRODUCTFAMILY

(4)POWERSUPPLY(VCC)

(8)NANDCLASSIFICATION

(7)ORGANIZATION

(14)BADBLOCK

(11)PACKAGETYPE

2:Flash

S:SLC+SingleDie+SmallBlock

A:SLC+DoubleDie+SmallBlock

B:SLC+QuadrupleDie+SmallBlock

F:SLC+SingleDie+LargeBlock

G:SLC+DoubleDie+LargeBlock

H:SLC+QuadrupleDie+LargeBlock

J:SLC+ODP+LargeBlock

K:SLC+DSP+LargeBlock

T:MLC+SingleDie+LargeBlock

U:MLC+DoubleDie+LargeBlock

V:MLC+QuadrupleDie+LargeBlock

W:MLC+DSP+LargeBlock

Y:MLC+ODP+LargeBlock

C:IncludedBadBlock

E:1~5BadBlockIncluded

M:AllGoodBlock

I:TSOP1

B:WSOP

S:USOP

P:LSOP1

T:FBGA

V:LGA

S:WLGA

N:VLGA

F:ULGA

X:Wafer

M:PGD1(chip)

Y:KGD

U:PGD2

W:1st

C:2nd

K:3rd

D:4th

zhangshengheng@

M

A

B

C

(5),(6)DENSITY

1:1nCE&1R/nB;SequentialRowReadEnable

2:1nCE&1R/nB;SequentialRowReadDisable

4:2nCE&2R/nB;SequentialRowReadEnable

5:2nCE&2R/nB;SequentialRowReadDisable

D:DualInterface;SequentialRowReadDisable

F:4nCE&4R/nB;SequentialRowReadDisable

zhangshengheng@ron镁光nand命名规则

/support/designsupport/documents/png

StandardNANDFlashPartNumberingSystem

Micron'spartnumberingsystemisavailableat

StandardNANDFlash*

MT29F2G08AAAWP-xxxxxxxxES:A

MicronTechnologyDesignRevision(shrink)

A=1stdesignrevision

-SupplyFlash

29F=Single-SupplyNANDFlashProductionStatus

29H=HighSpeedNANDBlank=Production

ES=Engineeringsamples

yQS=Qualificationsamples

1G=1GbMS=Mechanicalsamples

2G=2Gb

4G=4GbOperatingTemperatureRange

8G=8GbBlank=Commercial(0°Cto+70°C)

16G=16GbET=Extended(–40°Cto+85°C)

32G=32GbWT=Wireless(–25°Cto+85°C)

64G=64Gb

128G=128GbBlockOption(Rervedforu)

256G=256GbBlank=Standarddevice

WidthFlashPerformance

08=8bitsBlank=Fullspecification

16=16bits

rade(MT29HOnly)

Classification15=133MT/s

12=166MT/s

t/cellDieRnB

ASLC11PackageCode

BSLC21WP=48-pinTSOPI(CPLversion)(Pb-free)

CSLC21WC=48-pinTSOPI(OCPLversion)(Pb-free)

DSLC22H1=100-ballVFBGA(Pb-free),12x18x1.0

ESLC22H2=100-ballTFBGA(Pb-free),12x18x1.2

FSLC42HC=63-ballVFBGA,10.5x13x1.0

GSLC42C2=52-padULGA,12x17x0.4(uTBD)

JSLC4+42+2C3=52-padULGA,12x17x0.65

KSLC84C4=52-padVLGA,12x17x1.0(SDP/DDP/QDP)

ZSLC1NAC5=52-padVLGA,14x18x1.0(SDP/DDP/QDP)

C6=52-padLLGA,14x18x1.47(8DP,QDP,DDP)

MMLC11C7=48-padLLGA,12x20x1.47(8DP)

NMLC21SWC=48-pinStackedTSOP(OCPLversion)(Pb-free)

zhangshengheng@

PMLC21SWP=48-pinStackedTSOP(CPLversion)(Pb-free)

QMLC22

RMLC22Generation(M29only)/FeatureSet

TMLC42A=1sttofdevicefeatures

UMLC42B=2ndtofdevicefeatures(revonlyifdifferentthan1stt)

VMLC4+42+2C=3rdtofdevicefeatures(revonlyifdifferent)

WMLC84D=4thtofdevicefeatures(revonlyifdifferent)

YMLC84etc.

ingVoltageRange

A=3.3V(2.70–3.60V),VccQ3.3V(2.70–3.60V)

B=1.8V(1.70–1.95V)

C=3.3V(2.70–3.60V),VccQ1.8V(1.70–1.95V)

*ContactMicronforhelpdifferentiatingbetweenstandardandnext-generationNAND

offerings.

intelnandcodename

zhangshengheng@